Voltage Generation Circuit Stabilizing Output via Feedback

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Solution Overview

Problem

Conventional voltage generation circuits in semiconductor memory devices face instability in generating lower voltages due to variations in fabrication processes and temperature, leading to wider operation ranges and increased difficulty in stabilizing output voltage levels.

Innovation Solution

A voltage generation circuit incorporating a static current circuit and current mirror configuration, utilizing operational amplifiers, PMOS and NMOS transistors, and resistors to maintain stable currents and voltages, with specific resistor ratios and materials like polysilicon layers to reduce temperature dependence and process imbalances.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a smaller gap between power source voltage and output voltage is used to generate lower voltage, then the output voltage level can be reduced, but the difference between operation ranges increases causing wider valuation of amplification rates and making it more difficult to stabilize output voltage

Engineering Contradiction:
Improveoutput voltage levelVSAvoidstability of output voltage
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent employs feedback mechanisms through operational amplifiers that continuously monitor and adjust the output voltage based on reference voltages. The first operational amplifier compares the divided output voltage with a first reference voltage, and the second operational amplifier compares it with a second reference voltage, enabling precise stabilization of the output voltage level despite variations in operation ranges.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent changes the parameters of the operational amplifiers by providing different reference voltages (first reference voltage and second reference voltage) to the two operational amplifiers. This allows the system to adapt to different operation ranges and stabilize the output voltage across varying conditions by adjusting the comparison parameters.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If conventional MOS transistors are used in reference voltage generation circuit, then the circuit can be implemented, but current characteristics are easily affected by disproportion of fabrication processes and temperature variation

Engineering Contradiction:
Improveimplementation of reference voltage generation circuitVSAvoidcurrent characteristics stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces resistors as intermediary elements in the reference voltage generation circuit. By using resistors with specific ratios (first resistor and second resistor) in conjunction with the operational amplifiers, the circuit generates reference voltages that are less sensitive to MOS transistor parameter variations caused by fabrication processes and temperature changes.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the approach from relying on MOS transistor current characteristics to using resistor-based voltage division and operational amplifier comparison. This parameter change makes the reference voltage generation less dependent on temperature-sensitive transistor characteristics and more dependent on stable resistor ratios.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS7605643B2Voltage generation circuit and method thereof
Publication Date: 2009.10.20 SAMSUNG ELECTRONICS CO LTD
  • US7605643B2 patent drawing
  • US7605643B2 patent drawing
  • US7605643B2 patent drawing

AI summary

A voltage generation circuit may include a static current circuit and/or a current mirror. The static current circuit may include a first resistor. The current mirror may include a second resistor, a third resistor, and/or an output terminal.