Voltage Generator Circuit for Nonvolatile Memory Coupling Noise
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Solution Overview
Problem
Flash memory devices are vulnerable to signal noises due to their high density and small feature size, with selected word-lines being influenced by voltages applied to adjacent word-lines, leading to coupling noises.
Innovation Solution
A voltage generator for nonvolatile memory devices is designed, comprising a charging circuit, current mirror circuit, discharging circuit, and output circuit, which amplifies differences in voltage to generate currents that adjust and discharge voltages to target levels, reducing the influence of coupling noises from adjacent word-lines by generating adjusting currents based on sensing voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high density and small feature size are used in flash memory devices, then storage capacity is improved, but coupling noises from adjacent word-lines increase
Solution Approach 1:
The patent applies preliminary anti-action by generating a compensation voltage in advance that has the opposite polarity to the expected coupling noise. When a voltage is applied to a selected word-line, the circuit predicts and generates compensating voltages for adjacent word-lines before the coupling noise can fully affect the selected word-line. This preemptive approach counteracts the harmful coupling effect before it degrades signal integrity.
Solution Approach 2:
The patent implements feedback by continuously monitoring the voltage levels on word-lines and using this information to dynamically adjust compensation voltages. The circuit detects changes in voltage distribution and feeds this information back to the compensation voltage generator, which then adjusts the magnitude and timing of compensating voltages to maintain optimal signal levels despite coupling effects from adjacent word-lines.
2Productivity
If voltage is applied to adjacent word-lines for high density operation, then storage utilization is improved, but signal noise on selected word-line increases
Solution Approach 1:
The patent introduces compensation voltages as an intermediary element between adjacent word-lines and the selected word-line. These compensation voltages act as a mediator that absorbs and redirects the coupling noise energy, preventing it from directly affecting the selected word-line signal. The intermediary compensation mechanism allows adjacent word-lines to be actively used while maintaining signal integrity on the selected line.
3Length of moving object
If feature size is reduced for high density, then device integration is improved, but vulnerability to coupling noises increases
Solution Approach 1:
The patent applies dynamics by making the compensation voltage generation adaptive and time-dependent rather than static. The circuit dynamically adjusts the compensation voltage magnitude and timing based on real-time detection of coupling noise characteristics. This dynamic response allows the system to maintain reliability despite reduced feature sizes by continuously optimizing compensation parameters to match actual coupling conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the impact of coupling noises on selected word-lines by adaptively adjusting voltages, improving the operational stability and accuracy of nonvolatile memory devices.
Implementation Method 1
The charging circuit amplifies a difference between a reference voltage and a feedback voltage and generate a first current based on the difference
Implementation Method 2
The current mirror circuit is connected to a first power supply voltage, and is connected to the charging circuit at a first node and generates a second current based on the first current
Implementation Method 3
The discharging circuit is connected to a second power supply voltage, and is connected to the current mirror circuit at a second node to draw the second current, and discharges the output voltage to a target level by adjusting discharging amount of the second current based on a sensing voltage
Data Source
AI summary
A voltage generator of a nonvolatile memory device includes a charging circuit, a current mirror circuit, a discharging circuit and an output circuit. The charging circuit amplifies a difference between a reference voltage and a feedback voltage to generate a first current. The current mirror circuit is connected to the charging circuit and generates a second current based on the first current. The discharging circuit is connected to the current mirror circuit to draw the second current, and discharges the output voltage to a target level by adjusting discharging amount of the second current based on a sensing voltage which reflects a change of the feedback voltage. The output circuit is connected to the current mirror circuit, and provides the output voltage based on the first current and the second current to a first word-line connected to an output node.