Voltage Generator With Inductor Slope Circuit for Plasma Control
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Solution Overview
Problem
The miniaturization and high integration of semiconductor devices require precise control of plasma reactions and energy in semiconductor manufacturing processes to ensure quality, but existing technologies fall short in effectively managing these processes.
Innovation Solution
A voltage generator and waveform generator system that includes pulse and slope circuits with an inductor to apply controlled voltage levels and slopes to a capacitive load, enabling precise control of plasma generation and ion energy in semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional voltage generation methods are used, then device complexity is reduced, but manufacturing precision deteriorates due to inability to precisely control plasma reactions and energy
Solution Approach 1:
The voltage generator is divided into multiple independent voltage sources (first voltage source, second voltage source, third voltage source) that can be controlled separately. Each voltage source can be independently adjusted to achieve precise control over plasma reactions and energy distribution, resolving the contradiction between manufacturing precision and device complexity by breaking down the complex control task into manageable segments.
Solution Approach 2:
The system employs dynamic voltage control where the first voltage source applies a first voltage waveform, the second voltage source applies a second voltage waveform, and the third voltage source applies a third voltage waveform that can be adjusted in real-time. This dynamic adjustment capability allows precise control of plasma processes while maintaining a relatively simple overall device structure through programmable control.
2Manufacturing precision
If voltage control is simplified, then device complexity is reduced, but plasma energy control precision deteriorates
Solution Approach 1:
The system applies voltages in a predetermined sequence: first voltage waveform from the first voltage source, followed by second voltage waveform from the second voltage source, and then third voltage waveform from the third voltage source. This preliminary structuring of voltage application sequences enables precise ion energy control without requiring complex real-time control logic, as the control strategy is established in advance.
Solution Approach 2:
The invention changes voltage parameters (magnitude, waveform, timing) from three different voltage sources to precisely control plasma reactions and ion energy. By varying these electrical parameters independently, the system achieves high manufacturing precision for ion energy control while keeping the device structure relatively simple through parameter adjustment rather than structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for improved precision in plasma processes, enhancing the quality of semiconductor devices by effectively managing plasma reactions and energy distribution, thereby addressing the challenges of miniaturization and integration.
Implementation Method 1
The slope circuit may include an inductor to take current out of a capacitive load connected to the output terminal
Implementation Method 2
The at least one slope circuit may include an inductor to generate a current used to generate the slope voltage
Implementation Method 3
connecting the capacitive load to the inductor
Data Source
AI summary
A voltage generator includes a pulse circuit and a slope circuit. The pulse circuit is to apply voltages of three different levels to an output terminal and the slope circuit is to apply a slope voltage to the output terminal. The slope circuit includes an inductor to take current out of a capacitive load connected to the output terminal.