Voltage Reference Generator Temperature Dependency Cancellation

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Solution Overview

Problem

Existing voltage reference generators face challenges in achieving superior accuracy and temperature independence, particularly when utilizing the base-emitter voltage of bipolar junction transistors (BJTs), due to nonlinearity over temperature ranges.

Innovation Solution

A voltage reference generator design that includes a precursor voltage generator and a voltage extractor, utilizing BJTs to generate voltages with specific temperature-dependent components, which are then scaled and summed to cancel out temperature dependencies, resulting in an output voltage that is essentially temperature independent and proportional to the band gap voltage of silicon.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If VBE of BJT is used to generate reference voltage, then temperature characterization is improved, but nonlinearity over temperature range causes difficulty in achieving superior low temperature dependency

Engineering Contradiction:
Improvetemperature characterization accuracyVSAvoidtemperature dependency
Core Design Contradiction:
Measurement precisionVSStability of the object's composition

Solution Approach 1:

The patent segments the temperature dependency of VBE into three distinct components: a temperature-independent component (VGO), a linear temperature-dependent component, and a nonlinear temperature-dependent component. By separating these components mathematically and circuit-wise, each can be independently handled and canceled, resolving the contradiction between good temperature characterization and low temperature dependency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces intermediate voltages (V1, V2, V3) generated by reference units with different temperature dependencies, and intermediate processed voltages (VPTAT, VCTAT, VNL) that represent isolated temperature dependency components. These intermediaries serve as mediators that allow the systematic cancellation of temperature effects through weighted summation, achieving superior temperature independence.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If multiple reference units with different temperature dependencies are used, then temperature dependency cancellation is improved, but device complexity increases

Engineering Contradiction:
Improvetemperature independenceVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs universal building blocks (reference units, scaling blocks, summing blocks) that can be configured to generate different voltage components with specific temperature dependencies. These multi-functional blocks are reused throughout the circuit to systematically cancel both linear and nonlinear temperature effects, achieving high reliability without excessive complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent changes key parameters (scaling factors A1, A2, A3 and current ratios) to optimize the cancellation of temperature dependencies. By adjusting these parameters, the circuit achieves precise cancellation of both linear and nonlinear temperature effects while maintaining a relatively simple structure with only three reference units and three summing blocks.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves a highly accurate, temperature-independent output voltage with minimal temperature coefficients, suitable for high-performance mixed-signal and RF systems, by effectively canceling out linear and nonlinear temperature-dependent components.

Implementation Method 1

the base-emitter/diode voltage (VBE) of a bipolar junction transistor (BJT) are widely utilized to generate the reference voltage. Typically, the VBE of a BJT is better characterized over temperature and varies less than the threshold voltage and mobility of a MOSFET. However, the VBE of a BJT has nonlinearity over a temperature range

Methodology Applied
Scientific EffectBase-emitter voltage temperature dependency:

Data Source

PatentUS10359801B1Voltage reference generator with linear and non-linear temperature dependency elimination
Publication Date: 2019.07.23 IOWA STATE UNIV RES FOUND INC
  • US10359801B1 patent drawing
  • US10359801B1 patent drawing
  • US10359801B1 patent drawing

AI summary

The present disclosure relates to a voltage reference generator without temperature dependency. The disclosed voltage reference generator includes a precursor voltage generator and a voltage extractor. The precursor voltage generator is configured to provide a base-emitter voltage, a proportional-to-absolute-temperature (PTAT) voltage, and a nonlinear (NL) voltage. The voltage extractor is configured to scale and sum the base-emitter voltage, the NL voltage, and the PTAT voltage and provide an output voltage, such that linear temperature dependent components and nonlinear temperature dependent components within the base-emitter voltage, the NL voltage, and the PTAT voltage are not included in the output voltage, which is temperature independent.