Voltage Regulating Circuit with Segmented Transistors
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Solution Overview
Problem
Existing voltage regulating circuits for digital ICs face challenges in reacting to sudden power consumption changes due to their long control settling times, leading to the need for external buffering of internal voltage domains, which increases susceptibility to electromagnetic interference and requires additional pins, complicating circuit design and increasing complexity.
Innovation Solution
A voltage regulating circuit with a control transistor and a logic circuit, where the control transistor and transistors in the logic circuit have gate insulating regions of equal thickness, allowing for internal supply voltage regulation without external decoupling capacitors, enabling faster response times and reduced susceptibility to electromagnetic interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a single transistor with high voltage domain is used as control device in ordinary voltage regulators, then the regulator can handle high input voltages, but the control settling time becomes long (approximately 1 microsecond)
Solution Approach 1:
The patent divides the voltage regulation function into multiple transistors operating in different voltage domains. Instead of using one high-voltage transistor, multiple transistors with different gate insulating region thicknesses are employed, each optimized for its specific voltage domain, thereby reducing control settling time while maintaining voltage handling capability.
Solution Approach 2:
Different transistors are designed with locally optimized gate insulating region thicknesses matched to their respective voltage domains. Transistors handling lower voltages have thinner gate insulating regions for faster switching, while those handling higher voltages have thicker regions for adequate breakdown voltage, achieving optimal performance in each local region.
2Measurement precision
If operational amplifiers with multiple amplifying stages are used to provide high static control precision, then the regulating accuracy is improved, but the signal delay time increases
Solution Approach 1:
The control function is segmented across multiple transistors rather than relying on cascaded operational amplifier stages. Each transistor provides a portion of the voltage regulation function, eliminating the need for multiple amplifying stages and reducing signal delay time while maintaining control precision through the distributed architecture.
3Reliability
If external voltage regulators are used to provide supply voltages, then the voltage regulation function is achieved, but additional pins and external buffering are required, increasing device complexity
Solution Approach 1:
The voltage regulation function is merged into the integrated circuit itself through the multi-transistor architecture. Instead of requiring separate external voltage regulator components and their associated pins, the regulation functionality is integrated directly into the chip, reducing device complexity and eliminating external buffering requirements.
Solution Approach 2:
The integrated circuit provides its own voltage regulation through the internal multi-transistor circuitry. The circuit regulates voltages for different domains internally without requiring external service components, making the system self-sufficient and reducing external connections.
4Speed
If buffer capacitors are added externally to handle sudden load variations, then the response to power consumption changes is improved, but susceptibility to electromagnetic interference increases
Solution Approach 1:
The circuit provides instantaneous response to load variations through the inherent characteristics of the multi-transistor architecture. Each transistor can quickly adjust its conduction state in response to changing power demands, eliminating the need for external buffer capacitors and thereby reducing susceptibility to electromagnetic interference.
Data Source
AI summary
In various embodiments, a circuit is provided including a supply terminal, a logic circuit, an inverter and a control transistor which may include a body region, first and second source/drain regions, a gate insulating region having a layer thickness and a gate region. The first source/drain region may be coupled to the supply terminal. The logic circuit may have an internal supply terminal connected to the second source/drain region of the control transistor and a plurality of transistors each having a gate insulating region having a second layer thickness. The inverter input may be coupled to the internal supply terminal of the logic circuit and the output to the gate region of the control transistor. The inverter may include a transistor with a gate insulating region having a third layer thickness substantially equal to the first and second layer thicknesses.