Voltage Regulator Non-Regulation Detection Circuit
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Solution Overview
Problem
Existing voltage regulators face challenges in achieving high breakdown voltage while minimizing manufacturing costs and characteristic variations, particularly when using CMOS manufacturing processes, as high breakdown voltage MOS transistors with thick gate oxide films exhibit larger variations and increase production costs.
Innovation Solution
A voltage regulator design that utilizes a low breakdown voltage MOS transistor with a thin gate oxide film for the non-regulation detection circuit, limiting the input voltage of the comparator with a reference voltage, thereby reducing characteristic variations and omitting the need for high breakdown voltage MOS transistors, which simplifies the manufacturing process and lowers costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a high breakdown voltage MOS transistor with a thick gate oxide film is used for the non-regulation detection circuit, then the breakdown voltage is improved, but the characteristic variation increases and manufacturing cost increases
Solution Approach 1:
The patent changes the voltage parameter by introducing a reference voltage that limits the input voltage to the comparator. This allows the use of low breakdown voltage transistors (thin gate oxide film) while still achieving the required voltage handling capability through voltage clamping, thereby reducing characteristic variation without sacrificing breakdown voltage performance
Solution Approach 2:
The reference voltage acts as an intermediary element that mediates between the high power supply voltage and the comparator input. It prevents the full power supply voltage from reaching the comparator, allowing the use of transistors with thin gate oxide films while maintaining system reliability
2Strength
If a high breakdown voltage MOS transistor with a thick gate oxide film is used for the non-regulation detection circuit, then the breakdown voltage is improved, but the manufacturing cost increases due to additional process steps
Solution Approach 1:
By changing the voltage parameter through the reference voltage mechanism, the patent enables the use of standard low breakdown voltage transistors that can be manufactured with常规 CMOS processes, eliminating the need for specialized thick gate oxide film process steps and reducing manufacturing costs
3Adaptability or versatility
If the power supply voltage swings from low to high, then the voltage regulation range is improved, but the gate oxide film breakdown voltage requirement increases
Solution Approach 1:
The reference voltage serves as an intermediary that decouples the wide power supply voltage swing from the comparator input. It allows the voltage regulator to handle wide voltage ranges while protecting the comparator's gate oxide film from high voltage stress, maintaining adaptability without increasing breakdown voltage requirements
Data Source
AI summary
A voltage regulator includes an error amplifier which receives a feedback voltage and a reference voltage, an amplifier circuit which receives an output voltage of the error amplifier and controls a gate of an output transistor by a first output voltage, and a non-regulation detection circuit which detects a non-regulation state of the voltage regulator based on a second output voltage of the amplifier circuit. The amplifier circuit includes a first transistor receiving the output voltage of the error amplifier at a gate of the first transistor, and a second transistor connected to a drain of the first transistor, and provides the second output voltage based on a gate-source voltage of the second transistor.