Voltage Regulator Driving Blocks for Flash Memory Load Current
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Solution Overview
Problem
The increasing power consumption and load current in flash memory devices, particularly due to improved performance and integration, lead to a need for larger voltage generating circuits, which in turn increases the area of the device, necessitating a solution to enhance load current without enlarging the voltage generating circuit.
Innovation Solution
A voltage regulator with multiple driving blocks, including fast unit drivers for quick response and large unit drivers for stable high current output, is implemented. This configuration allows for efficient internal voltage generation and stabilization, enabling the memory device to manage changing load currents without increasing the circuit size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the size of the voltage generating circuit is increased to cope with increased power consumption and load current, then the load current capability is improved, but the chip area increases
Solution Approach 1:
The voltage generating circuit is divided into multiple driving blocks (first driving block, second driving block, etc.), each capable of independent operation. This segmentation allows the circuit to provide different current levels by activating specific blocks, achieving high load current capability when needed while maintaining small area by only activating necessary blocks during normal operation.
Solution Approach 2:
The voltage generating circuit dynamically adjusts its configuration by selectively enabling or disabling driving blocks based on load requirements. The controller activates a first driving block for normal operation and adds a second driving block when high current is needed, allowing the circuit to adapt its current output level without permanently occupying the area of all possible blocks.
2Power
If a single large unit driver is used to provide high output current, then the load current capability is improved, but the response speed decreases
Solution Approach 1:
Each driving block contains both a first unit driver and a second unit driver. The first unit driver is designed for fast response with smaller current capability, while the second unit driver provides large current with slower response. This segmentation within each block allows the system to achieve both fast response (by activating first unit drivers) and high current (by activating second unit drivers) as needed.
Solution Approach 2:
The system merges the capabilities of multiple unit drivers within each driving block. By combining the fast first unit driver and the high-current second unit driver in parallel within each block, the circuit can simultaneously achieve fast response and high current output when both types of drivers are activated together.
Data Source
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AI summary
A memory device may include a reference voltage generator that generates a reference voltage, a voltage regulator that includes a plurality of driving blocks generating an internal voltage based on the reference voltage, and a power line that receives the internal voltage. At least one of the plurality of driving blocks may include a first unit driver that generates a first output current flowing through the power line based on the reference voltage and a change in the internal voltage, and a second unit driver that generates a second output current larger than the first output current flowing through the power line, based on the reference voltage and the change in the internal voltage. The first unit driver may generate the first output current faster than the second output current of the second unit driver.