Voltage Sensing Circuit With Zener Protection and Fast Low-Current Detection

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Solution Overview

Problem

Voltage sensing circuits face conflicting requirements of low current consumption and fast performance, and often fail to protect against high voltages that can damage components, leading to inefficiencies and potential component damage.

Innovation Solution

A voltage sensing circuit is designed with a high-voltage protection circuit, a gate control circuit, a capacitor divider circuit, a comparator, a hysteresis circuit, and a pulse generator, which together enable rapid voltage sensing with minimal current draw and protection against high voltages, using a Zener diode and n-type FETs to control transistor switches and manage capacitor charging/discharging.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If traditional voltage sensing circuits are used, then voltage monitoring function is provided, but current consumption is high and response speed is slow

Engineering Contradiction:
Improvecurrent consumptionVSAvoidresponse speed
Core Design Contradiction:
Use of energy by moving objectVSSpeed

Solution Approach 1:

The circuit dynamically switches between different operational modes using FET transistors. The first FET (M1) controls the connection of the Zener diode to the sensing node, while the second FET (M2) controls the discharge path. This dynamic switching enables the circuit to achieve fast response when voltage threshold is exceeded while maintaining low quiescent current consumption during normal operation.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The circuit employs periodic pulsed operation through the use of FET switches that are activated only when needed. The sensing circuit remains in a high-impedance low-power state until the voltage threshold is detected, at which point the FETs are activated for a brief period to generate the output signal, then return to standby mode. This periodic action reduces average current consumption while maintaining fast response capability.

Inventive Principle:
Principle #19Periodic action

2Reliability

If voltage sensing circuit operates without protection, then simple circuit design is maintained, but high voltage can damage components

Engineering Contradiction:
Improvehigh-voltage protectionVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The Zener diode serves as an intermediary protection element that clamps excessive voltage at the sensing node. When voltage exceeds the Zener breakdown voltage, the diode conducts and limits the voltage seen by subsequent circuit elements (FETs, resistors), protecting them from high-voltage damage. This intermediary component adds minimal complexity while providing robust protection.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The circuit incorporates protection mechanisms that are always in place before high-voltage events occur. The Zener diode is pre-positioned to immediately clamp any overvoltage condition, and the FETs are designed with gate-source voltage ratings that account for potential voltage excursions. This beforehand cushioning ensures components are protected from the outset without requiring complex active protection logic.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Speed

If fast response voltage sensing is implemented, then over-voltage detection speed is improved, but current consumption increases

Engineering Contradiction:
Improvedetection speedVSAvoidcurrent consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The circuit applies different impedance characteristics to different parts of the sensing path. The first resistor (R1) provides a low-impedance path for fast voltage detection, while the second resistor (R2) and FET combination provide high impedance during normal operation to minimize current draw. The Zener diode provides a low-impedance clamping path only when needed. This local differentiation of impedance qualities enables fast detection capability without continuous high current consumption.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The circuit achieves fast response times (less than 20 microseconds) with low current consumption (less than 60 nanoamps) and effective high-voltage protection, extending battery life and reducing operational costs in low-power applications.

Implementation Method 1

A voltage sensing circuit is designed with a high-voltage protection circuit, a gate control circuit, a capacitor divider circuit, a comparator, a hysteresis circuit, and a pulse generator, which together enable rapid voltage sensing with minimal current draw and protection against high voltages, using a Zener diode and n-type FETs

Methodology Applied
Scientific EffectZener effect: Avalanche Breakdown

Implementation Method 2

using a Zener diode and n-type FETs to control transistor switches and manage capacitor charging/discharging

Methodology Applied
Scientific EffectField effect: Electrostatic Induction

Implementation Method 3

a capacitor divider circuit, a comparator, a hysteresis circuit, and a pulse generator, which together enable rapid voltage sensing with minimal current draw and protection against high voltages

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11293954B2Voltage sensing circuit
Publication Date: 2022.04.05 TEXAS INSTRUMENTS INC
  • US11293954B2 patent drawing
  • US11293954B2 patent drawing
  • US11293954B2 patent drawing

AI summary

Aspects of the disclosure provide for a circuit. In some examples, the circuit includes a Zener diode, a first current source, a first n-type field effect transistor (FET), a first inverter circuit, and a second current source. The Zener diode has a cathode coupled to a first node and an anode coupled to a second node. The first current source has a first terminal coupled to the second node and a second terminal coupled to a ground terminal. The first n-type FET has a gate terminal coupled to the second node, a source terminal coupled to the ground terminal, and a drain terminal coupled to a third node. The first inverter circuit has an input coupled to the third node and an output coupled to a fourth node. The second current source has a first terminal coupled to a fifth node and a second terminal coupled to the third node.