Voltage Stabilizing Circuit for Semiconductor Static Discharge
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor integrated circuits designed for low voltage power supplies are vulnerable to static electricity damage, and existing static electricity protection circuits, such as MOS transistor type reverse diodes, occupy large circuit areas, hindering integration density.
Innovation Solution
A semiconductor integrated circuit with a voltage stabilizing unit that includes a clamping section and a discharge section, utilizing forward and reverse diodes to clamp and discharge static electricity without requiring a large circuit area, allowing for efficient static electricity discharge between voltage supply units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a MOS transistor type reverse diode is used to discharge static electricity, then static electricity protection is achieved, but the circuit area becomes large
Solution Approach 1:
The voltage stabilizing unit is divided into two distinct sections: a clamping section (first voltage stabilizing unit) that temporarily drops the voltage level when static electricity is introduced, and a discharge section (second voltage stabilizing unit) that discharges the clamped voltage to the power supply terminal. This segmentation allows each section to be optimized for its specific function, reducing the overall circuit area compared to a single large MOS transistor reverse diode while maintaining effective static electricity protection.
2Reliability
If a large reverse diode is used to protect from static electricity damage, then protection effectiveness is improved, but semiconductor integration density decreases
Solution Approach 1:
By segmenting the protection circuit into clamping and discharge sections, the patent achieves effective static electricity protection with a smaller total circuit area, thereby improving integration density without sacrificing protection effectiveness.
Solution Approach 2:
The patent changes the operational parameters of the protection circuit by using a two-stage voltage stabilization approach with different threshold voltages and discharge characteristics, allowing for more efficient use of circuit area while maintaining protection effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the circuit area required for static electricity protection, enabling higher semiconductor integration density while effectively discharging static electricity without using large MOS transistors.
Implementation Method 1
a clamping section configured to temporarily drop a level of a voltage introduced from the first or second voltage supply unit
Implementation Method 2
a discharge section configured to discharge the voltage having passed through the clamping section to the second or first voltage supply unit
Data Source
AI summary
A semiconductor integrated circuit includes a first voltage supply unit, a second voltage supply unit configured to supply a voltage with a level different from that of the first voltage supply unit, and a voltage stabilizing unit connected between the first and second voltage supply units, and including at least one discharge path that includes a clamping section configured to temporarily drop a level of a voltage introduced from the first or second voltage supply unit, and a discharge section configured to discharge the voltage having passed through the clamping section to the second or first voltage supply unit.