Voltage Supply Circuit for Hot-Carrier-Safe Memory Level Control
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Solution Overview
Problem
High data reliability and reduced chip size are compromised by hot carrier injection in semiconductor memory, which existing solutions like high threshold voltage transistors attempt to address but at the cost of increased chip size.
Innovation Solution
A semiconductor device architecture that includes a voltage supply circuit controlling an intermediate signal to reduce drain-source voltage levels of transistors, preventing hot carrier injection without the need for additional transistors, thereby maintaining reliability and minimizing chip size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high threshold voltage transistors are used to prevent hot carrier injection, then reliability is improved, but chip size increases
Solution Approach 1:
The patent changes the voltage parameter by introducing a voltage supply circuit that provides a controlled intermediate voltage level. This allows the drain-source voltage of the target transistor to be reduced to a safe level without changing the transistor's threshold voltage, thereby preventing hot carrier injection while avoiding the need for additional high-Vt transistors that would increase chip area.
Solution Approach 2:
The patent introduces a voltage supply circuit as an intermediary component that generates and supplies a controlled intermediate voltage to the drain of the target transistor. This intermediary circuit enables precise voltage control to prevent hot carrier injection without requiring structural changes to the transistor itself or adding redundant transistor stages that would consume chip area.
2Reliability
If additional transistors are added to reduce drain-source voltage, then hot carrier injection is prevented, but device complexity increases
Solution Approach 1:
The voltage supply circuit acts as an intermediary that simplifies the overall device structure by providing centralized voltage control. Instead of complicating the transistor configuration with additional series transistors or complex gate control circuits, the intermediary voltage supply circuit delivers the required voltage control function through a dedicated, modular approach.
Solution Approach 2:
The patent segments the voltage control function into a separate, dedicated voltage supply circuit module. This segmentation allows the target transistor to maintain its simple, efficient structure while the voltage control functionality is handled by a specialized circuit that can be independently optimized and controlled.
3Reliability
If drain-source voltage is reduced to prevent hot carrier injection, then reliability is improved, but power supply efficiency decreases
Solution Approach 1:
The patent dynamically changes the voltage parameter by providing different voltage levels under different operating conditions. The voltage supply circuit can adjust the intermediate voltage level based on operational requirements, ensuring that the drain-source voltage is reduced only when necessary to prevent hot carrier injection, while maintaining higher voltage levels during normal operation to preserve power supply efficiency.
Data Source
AI summary
Apparatuses for voltage level control in a semiconductor device are described. An example apparatus includes: a plurality of circuits coupled in parallel between first and second nodes, the first node being supplied with a first voltage; and a voltage supply circuit that supplies the second node with one of second and third voltages, the first voltage being greater than the second voltage, and the second voltage being greater than the third voltage. The plurality of circuits includes a first circuit including a transistor coupled to the second node. The first circuit activates the transistor responsive to a first control signal and further sets a voltage level of the second node higher than the second voltage after the voltage supply circuit supplies the second nodes with the second voltage.