Voltage Switch Circuit Using Lightly Doped PMOS for High Voltage
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Solution Overview
Problem
Conventional voltage switch circuits require a special manufacturing process to handle high voltage, increasing complexity and cost due to incompatibility with standard logic circuit manufacturing processes.
Innovation Solution
A voltage switch circuit utilizing lightly-doped PMOS transistors that can withstand high voltage stress, allowing production within standard logic circuit manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional voltage switch circuits are used to handle high voltage, then high voltage compatibility is achieved, but manufacturing complexity and cost increase due to special manufacturing process requirements
Solution Approach 1:
The patent changes the doping concentration parameter of PMOS transistors to create lightly-doped regions that can withstand high voltage stress. By adjusting the doping concentration to be lower than conventional levels, the transistors achieve high voltage compatibility while remaining compatible with standard manufacturing processes
Solution Approach 2:
The invention makes the voltage switch circuit compatible with both high voltage operation and standard logic circuit manufacturing processes. The lightly-doped PMOS transistors serve dual purposes: maintaining standard process compatibility while providing high voltage stress withstand capability
2Reliability
If conventional voltage switch circuits are used to handle high voltage, then high voltage compatibility is achieved, but fabrication cost increases due to special manufacturing process
Solution Approach 1:
By changing the doping concentration parameter to create lightly-doped PMOS transistors, the circuit achieves high voltage compatibility using standard manufacturing processes, thereby reducing fabrication costs associated with special processes
Solution Approach 2:
The patent uses standard lightly-doped PMOS transistors that are already available through conventional manufacturing processes, replacing the need for expensive special process requirements while achieving the desired high voltage capability
Data Source
AI summary
A voltage switch circuit uses PMOS transistors to withstand high voltage stress. Consequently, the NMOS transistors are not subject to high voltage stress. The lightly-doped PMOS transistors are compatible with a logic circuit manufacturing process. Consequently, the voltage switch circuit may be produced by a logic circuit manufacturing process.