Voltage Switching Circuit for Low-Breakdown High-Voltage I/O
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Solution Overview
Problem
The challenge of realizing high-voltage input/output in electronic devices with low breakdown-voltage transistors, particularly in three-stage stacked circuits, due to reduced breakdown voltages in advanced manufacturing processes.
Innovation Solution
Implementing a breakdown-voltage control circuit that includes a high voltage monitor circuit and voltage switching circuits to generate and control reference signals, allowing the use of low breakdown-voltage transistors in three-stage stacked configurations to handle high-voltage interfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a three-stage stacked circuit of IO transistors with reduced breakdown voltage is used, then the device can be manufactured using advanced processes, but the circuit cannot directly handle high-voltage interfaces
Solution Approach 1:
The patent introduces an intermediate voltage conversion stage between the low-voltage transistor circuit and high-voltage interface. The voltage conversion circuit acts as a mediator that transforms the output of the low-breakdown-voltage transistors to match high-voltage interface requirements, enabling advanced process manufacturing while maintaining high-voltage interface capability.
Solution Approach 2:
The patent dynamically changes operating voltage parameters through multiple voltage conversion stages. By adjusting voltage levels at different circuit stages and using configurable voltage selection logic, the system adapts voltage parameters to match both the low-voltage transistor requirements and high-voltage interface demands.
2Manufacturing precision
If the breakdown voltage of IO transistors is reduced for advanced manufacturing, then manufacturing precision improves, but the number of stacked stages must increase to three stages
Solution Approach 1:
The patent segments the voltage conversion function into multiple independent stages rather than using a single complex high-voltage stage. Each voltage conversion stage handles a specific voltage transformation task, allowing the use of low-breakdown-voltage transistors while achieving the required voltage multiplication through structured segmentation of the conversion process.
3Adaptability or versatility
If a two-stage stacked circuit is used with transistors having breakdown voltage more than half of 3.3V supply, then high-voltage interface is achieved, but this approach is not feasible after 5nm process where breakdown voltage is less than half of supply
Solution Approach 1:
The patent implements dynamic voltage selection and conversion where the circuit can adapt its operating parameters based on process characteristics. The voltage conversion stages and selection logic dynamically adjust voltage levels to accommodate varying transistor breakdown voltages across different manufacturing processes, enabling the same architecture to work from 28nm down to 5nm and beyond.
Data Source
AI summary
A breakdown-voltage control circuit includes a high voltage monitor circuit and a first voltage switching circuit 1112 connected to the high voltage monitor circuit, the high voltage monitor circuit generating a first reference signal based on an input signal inputted to the high voltage monitor circuit, the first voltage switching circuit comparing a first application voltage applied to the first voltage switching circuit with the first reference signal, outputting the first reference signal as a first control signal when the first application voltage is exceeded, and outputting the first application voltage as the first control signal when the voltage of the first reference signal is less than the first application voltage.