Radioactive Voltaic Cell with Quantum Dot Tunneling

Solution Overview

Problem

Semiconductor voltaic cells powered by radioactive material suffer from low voltage output, low power output, and short life due to inefficient harnessing of energy from charge carriers excited by energetic particles, which lose energy through collisions or recombination before being captured by radioactive decay products.

Innovation Solution

A voltaic cell design incorporating a radioactive layer with n-type and p-type semiconductor layers, dielectric layers containing quantum dots, and conductor layers to promote quantum mechanical tunneling of charge carriers, allowing them to be collected before losing energy, thereby increasing voltage, power, and extending life.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional semiconductor voltaic cells are used to harness energy from radioactive material, then the cell can generate electrical energy, but the voltage output is low and power output is low due to inefficient energy capture from charge carriers

Engineering Contradiction:

Improvepower outputVSAvoidenergy loss from charge carriers

Core Design Contradiction:

PowerVSLoss of energy

Solution Approach 1:

The patent segments the energy capture process by introducing multiple discrete energy levels (ground state, first excited state, second excited state) within the semiconductor band gap. Charge carriers are captured at specific segmented energy levels corresponding to quantum dot states, preventing energy loss through continuous phonon emission and enabling more efficient energy transfer to the electrical circuit.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent changes the energy parameters of the semiconductor structure by introducing quantized energy levels through quantum confinement effects. The band gap is modified to include discrete excited states at specific energy levels (e.g., 0.5 eV, 1.0 eV below conduction band), allowing precise control over charge carrier energy capture and conversion efficiency.

Inventive Principle:

Principle #35Parameter changes

2Stress or pressure

If conventional semiconductor voltaic cells are used to harness energy from radioactive material, then the cell can generate electrical energy, but the voltage output is low due to inefficient energy capture from charge carriers

Engineering Contradiction:

Improvevoltage outputVSAvoidenergy loss from charge carriers

Core Design Contradiction:

Stress or pressureVSLoss of energy

Solution Approach 1:

The patent segments the energy capture process by introducing multiple discrete energy levels (ground state, first excited state, second excited state) within the semiconductor band gap. Charge carriers are captured at specific segmented energy levels corresponding to quantum dot states, preventing energy loss through continuous phonon emission and enabling more efficient energy transfer to the electrical circuit.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent changes the energy parameters of the semiconductor structure by introducing quantized energy levels through quantum confinement effects. The band gap is modified to include discrete excited states at specific energy levels (e.g., 0.5 eV, 1.0 eV below conduction band), allowing precise control over charge carrier energy capture and conversion efficiency.

Inventive Principle:

Principle #35Parameter changes

3Duration of action of stationary object

If conventional semiconductor voltaic cells are used, then the cell can operate with radioactive material, but the life is short due to charge carrier capture by radioactive decay products accumulating in the lattice

Engineering Contradiction:

Improvecell lifeVSAvoidcharge carrier capture by decay products

Core Design Contradiction:

Duration of action of stationary objectVSReliability

Solution Approach 1:

The patent implements preliminary action by providing alternative capture pathways (quantum dot excited states) before charge carriers can be captured by radioactive decay products. The quantized energy levels act as intermediate traps that capture carriers early in their thermalization process, preventing subsequent capture by defects and maintaining reliable operation over extended periods.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The quantum dot excited states serve as intermediary structures between the conduction band and the final electrical output. These intermediaries provide controlled energy release pathways that bypass the harmful interaction with radioactive decay products, thereby extending cell life while maintaining operational reliability.

Inventive Principle:

Principle #24Intermediary (Mediator)

4Productivity

If conventional semiconductor voltaic cells are used, then the cell can convert radioactive energy to electrical energy, but the efficiency is low due to charge carrier recombination and energy loss through phonon excitation

Engineering Contradiction:

Improveenergy conversion efficiencyVSAvoidenergy loss through phonon excitation and recombination

Core Design Contradiction:

ProductivityVSLoss of energy

Solution Approach 1:

The patent segments the energy capture process by introducing multiple discrete energy levels (ground state, first excited state, second excited state) within the semiconductor band gap. Charge carriers are captured at specific segmented energy levels corresponding to quantum dot states, preventing energy loss through continuous phonon emission and enabling more efficient energy transfer to the electrical circuit.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent utilizes phase transitions in the form of quantum mechanical transitions between discrete energy levels. Charge carriers undergo transitions from the conduction band to quantized excited states, then to the ground state, with each transition releasing energy that can be harvested electrically rather than lost as phonons or recombination.

Inventive Principle:

Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances voltage and power output by harnessing higher energy charge carriers and extends the life of the cell by channeling them to conductor layers before energy loss or capture, resulting in improved performance compared to prior art cells.

Implementation Method 1

A first dielectric layer overlies the first n-type semiconductor layer, the first dielectric layer comprising a plurality of quantum dots. A second dielectric layer overlies the first p-type semiconductor layer, the second dielectric layer comprising a plurality of quantum dots.

Methodology Applied

Scientific EffectQuantum mechanical tunneling:

Implementation Method 2

the energetic particles (e.g., alpha particles, beta particles) released during decay of the radioactive energy source

Methodology Applied

Scientific EffectRadioactive decay: Radioactive Decay

Implementation Method 3

The excited carriers may lose energy through inelastic collisions, such as phonon excitation of the semiconductor lattice

Methodology Applied

Scientific EffectPhonon excitation:

Data Source

PatentUS9391218B2Voltaic cell powered by radioactive material

Publication Date: 2016.07.12 INTRIENERGY CANADA LABS INC

AI summary

A voltaic cell uses a radioactive material for energy. Energetic particles emitted by the radioactive material boost charge carriers within a semiconductor lattice into higher energy bands. Dielectric layers having quantum dots tuned by size and spacing (density) to favor particles having specific energies permit quantum mechanical tunneling of the charge carriers before they lose significant energy, are captured, or recombine. The energetic carriers tunnel to an electrical circuit, where they perform work.