Vortex Exhaust Drying Chamber for Semiconductor Substrates

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Solution Overview

Problem

Existing substrate drying technologies, such as spin dryers, face inefficiencies due to vortices generated during the drying process, which can prevent complete drying and reattach rinsing solution or particles to the substrate, especially on larger substrates with narrow gaps between the drying chamber and the substrate.

Innovation Solution

The apparatus includes a drying chamber with a vortex exhaust positioned perpendicular and downwardly slanted to drain the vortex effectively, combined with a guiding member to concentrate the drying fluid on the substrate and a fan filter unit to remove impurities, ensuring the drying fluid flows directly to the substrate without interference from the vortex.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a spin dryer is used to dry the substrate by rotating it, then the drying process can be performed, but a vortex is generated that disturbs the drying fluid flow and prevents complete drying

Engineering Contradiction:
Improvedrying efficiencyVSAvoiddrying completeness
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The harmful vortex is extracted and removed from the drying chamber through a dedicated vortex exhaust port. The vortex exhaust is positioned to drain the vortex generated by substrate rotation, separating it from the drying fluid flow path. This allows the drying process to continue without the vortex disturbing the drying fluid or causing rinsing solution to reattach to the substrate.

Inventive Principle:
Principle #2Taking out (Extraction)

2Area of stationary object

If the substrate size is increased, then larger substrates can be processed, but the gap between the drying chamber inner wall and substrate is narrowed, intensifying vortex-related problems

Engineering Contradiction:
Improvesubstrate sizeVSAvoidvortex disturbance
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

A vortex exhaust port is introduced as an intermediary element between the substrate rotation and the drying chamber environment. This vortex exhaust acts as a mediator that captures and removes the vortex generated during rotation, preventing it from affecting the drying fluid flow. The vortex exhaust is strategically positioned to effectively drain vortices even when the gap between the substrate and drying chamber wall is narrow.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If the spin chuck rotation is suspended to prevent vortex formation, then drying fluid flow is improved, but rinsing solution and particles may float and reattach to the substrate

Engineering Contradiction:
Improvedrying qualityVSAvoidparticle reattachment
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The spin chuck continues to rotate throughout the drying process without suspension. The vortex exhaust port ensures that the vortex generated by continuous rotation is continuously drained, maintaining both the beneficial centrifugal force for drying and the removal of harmful vortices. This eliminates the need to suspend rotation, thereby preventing rinsing solution and particles from floating and reattaching to the substrate.

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances drying efficiency by preventing vortex disturbance of the drying fluid flow, ensuring complete drying and preventing reattachment of solution or particles, thereby improving the cleaning and drying process for semiconductor substrates.

Implementation Method 1

A vortex of the drying fluid may be drained through the vortex exhaust

Methodology Applied
Scientific EffectVortex: Vortex Ring

Implementation Method 2

The spin dryer may include, for example, a drying chamber having an inlet, an outlet, and a spin chuck installed in the drying chamber. A drying fluid may be supplied through the inlet. The drying fluid may be drained through the outlet. The spin chuck may rotate the semiconductor substrate.

Methodology Applied
Scientific EffectCentrifugal force: Centrifugal Force

Data Source

PatentUS9620392B2Single type apparatus for drying a substrate and single type system for cleaning a substrate including the same
Publication Date: 2017.04.11 SAMSUNG ELECTRONICS CO LTD
  • US9620392B2 patent drawing
  • US9620392B2 patent drawing
  • US9620392B2 patent drawing

AI summary

An apparatus for drying a substrate may include a spin chuck, a drying chamber and a drying fluid line. The spin chuck may be configured to support the substrate. The spin chuck may rotate the substrate. The drying chamber may be configured to receive the spin chuck. The drying chamber may have an inlet, an outlet and a vortex exhaust. A drying fluid may be supplied through the inlet into the drying chamber. The drying fluid may be drained through the outlet. A vortex of the drying fluid may be drained through the vortex exhaust. The drying fluid line may be connected to the inlet.