Vapor Phase Epitaxial Growth Device with Controlled Mg Supply
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Solution Overview
Problem
Vapor phase epitaxial growth methods without organic metal, such as the HVPE method, face challenges in consistently doping Mg due to decomposition issues and excessive evaporation when using metal Mg, making it difficult to control the supply amount.
Innovation Solution
A vapor phase epitaxial growth device with a solid unit in the gas supply pipe that decomposes at a predetermined temperature, providing a continuous void for controlled Mg supply, allowing for consistent Mg doping in compound semiconductor growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If metal Mg is used for doping, then Mg can be supplied as a raw material, but Mg evaporates excessively making it difficult to control the supply amount
Solution Approach 1:
The patent changes the physical and chemical parameters of the Mg supply system by using a compound material (MgO or Mg3N2) instead of pure metal Mg, and controlling the decomposition temperature through the choice of binder material. This allows Mg to be released at a controlled rate through thermal decomposition rather than uncontrolled evaporation.
Solution Approach 2:
The patent employs composite materials where Mg is contained in the form of MgO or Mg3N2 within a binder matrix. The binder material (organic compound or resin) decomposes at a specific temperature to release Mg in a controlled manner, preventing excessive evaporation while maintaining constant supply.
2Quantity of substance
If organic metal such as Cp2Mg is used for doping, then Mg can be supplied, but it decomposes before reaction occurs
Solution Approach 1:
The patent changes the chemical form of Mg from organic metal compounds to inorganic compounds (MgO, Mg3N2) that are stable at room temperature but decompose at controlled temperatures. This eliminates premature decomposition while maintaining Mg supply capability.
Solution Approach 2:
The patent prepares Mg in a stable precursor form (MgO or Mg3N2) that can be stored and transported without decomposition, then activates it in-situ through controlled thermal decomposition just before the reaction, ensuring consistent and reliable Mg supply.
3Manufacturing precision
If vapor phase epitaxial growth method without organic metal is used, then carbon contamination does not occur, but it is difficult to dope Mg with constant supply amount
Solution Approach 1:
The patent uses composite materials where Mg-containing compounds are embedded in a binder matrix that decomposes at a controlled rate, providing constant Mg supply without introducing carbon contamination from organic metals.
Solution Approach 2:
The patent replaces the mechanical/chemical supply method (direct metal Mg or organic metal) with a thermal decomposition mechanism, where controlled heating causes the binder to decompose and release Mg at a constant rate, ensuring doping consistency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables a constant supply of Mg during the growth process, improving the consistency and efficiency of Mg doping in compound semiconductors compared to traditional methods.
Implementation Method 1
the solid unit is heated to the predetermined temperature or higher by the first heater unit. The first region in the solid unit thereby decomposes, and a gas containing Mg is thereby supplied into the reactor vessel
Data Source
AI summary
A vapor phase epitaxial growth device comprises a reactor vessel. The device comprises a wafer holder arranged in the reactor vessel. The device comprises a first material gas supply pipe configured to supply first material gas to the reactor vessel. The device comprises a second material gas supply pipe configured to supply second material gas, which is to react with the first material gas, to the reactor vessel. The device comprises a particular gas supply pipe having a solid unit arranged on a supply passage. The device comprises a first heater unit configured to heat the solid unit to a predetermined temperature or higher. The solid unit comprises a mother region and a first region arranged continuously within the mother region. The mother region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and contains Mg.