Semiconductor Layer Stack With V-Pits for Low-Voltage Light Emission
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Solution Overview
Problem
Current semiconductor devices face challenges in improving carrier injection efficiency, hole injection efficiency, current spreading, and luminous efficiency, while also requiring lower driving voltage and enhanced color rendering index.
Innovation Solution
The semiconductor device incorporates third to fifth semiconductor layers with V-pits formed through treading dislocation regions, utilizing a 2DHG effect to increase hole injection and carrier injection efficiency, and includes a specific thickness ratio for these layers to enhance luminous efficiency and reduce operating voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional light emitting device structures are used, then manufacturing is simpler, but carrier injection efficiency is insufficient
Solution Approach 1:
The semiconductor device is divided into multiple functional layers (first semiconductor layer, second semiconductor layer, active layer, third semiconductor layer, fourth semiconductor layer, fifth semiconductor layer) with specific structures (V-pits, protrusions) to improve carrier injection efficiency while maintaining manageable complexity through clear functional segmentation
Solution Approach 2:
V-pits are formed locally in the second semiconductor layer at specific positions to enhance hole injection efficiency, while protrusions are created in the third semiconductor layer to improve current spreading, applying local structural modifications to address specific performance issues without redesigning the entire device
2Reliability
If standard semiconductor layer thicknesses are used, then manufacturing is easier, but hole injection efficiency and current spreading are insufficient
Solution Approach 1:
The thicknesses of the third, fourth, and fifth semiconductor layers are specifically controlled (third layer: 50-200nm, fourth layer: 200-500nm, fifth layer: 50-200nm) to optimize hole injection efficiency and current spreading, using precise parameter control to achieve performance improvement without excessive manufacturing complexity
3Reliability
If conventional device structures are used, then manufacturing cost is lower, but luminous efficiency is insufficient
Solution Approach 1:
The device is segmented into six distinct semiconductor layers, each performing specific functions (carrier injection, current spreading, light emission), which improves luminous efficiency through optimized carrier management while maintaining manufacturing feasibility through clear functional division
Solution Approach 2:
V-pits are formed locally in the second semiconductor layer to enhance hole injection at critical positions, and protrusions are created in the third semiconductor layer to improve current spreading, applying local structural enhancements to boost luminous efficiency without requiring complete structural redesign
4Reliability
If standard operating voltages are used, then device operation is simpler, but driving voltage is too high
Solution Approach 1:
The thicknesses of the third, fourth, and fifth semiconductor layers are precisely controlled to optimize electrical properties and reduce operating voltage, while the V-pit structure in the second semiconductor layer enhances hole injection efficiency, collectively achieving lower driving voltage through parameter optimization
Solution Approach 2:
The multi-layer structure segments the voltage drop across different functional regions, with each layer contributing to voltage reduction through optimized carrier injection and transport, achieving lower overall operating voltage through distributed functional optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves carrier injection efficiency, increases hole injection, enhances luminous efficiency, and lowers the driving voltage, while also improving the color rendering index of light emitting devices.
Implementation Method 1
increase hole injection efficiency due to 2DHG effect
Data Source
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Figure 3
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AI summary
An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer. The semiconductor device according to the embodiment can improve the luminous efficiency by not only increasing the hole injection efficiency by the 2DHG effect, but also increasing injection of carriers that are injected through the V-pits.