VUV Light Diffusion for Large-Area Semiconductor Static Neutralization
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Solution Overview
Problem
Existing technologies face challenges in efficiently removing static electricity from large-area semiconductor substrates, particularly due to the limited divergence angle of vacuum ultraviolet (VUV) light emitted by ionizers, which requires large vacuum chambers and extended processing times.
Innovation Solution
The apparatus employs a diffractive optical element to expand the VUV light emitted from a VUV generator, allowing it to cover a wider area on the semiconductor substrate, and uses a grid plate with separate electrode regions to supply varying voltages and direct the VUV light effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If VUV light is used to remove static electricity from semiconductor substrates, then static electricity neutralization is achieved, but the limited divergence angle of VUV light requires large vacuum chambers and extended processing times
Solution Approach 1:
The patent segments the vacuum chamber into multiple zones with different vacuum degrees. The light source region maintains a high vacuum degree (10^-4 to 10^-6 Torr) for optimal VUV light generation, while the substrate processing region operates at a lower vacuum degree (10^-2 to 10^-4 Torr). This segmentation allows the use of smaller vacuum chambers while maintaining effective static electricity removal capability.
Solution Approach 2:
The patent changes the vacuum degree parameter across different regions of the vacuum chamber. By creating a gradient vacuum environment where the light source region has higher vacuum degree and the substrate region has lower vacuum degree, the system achieves both effective VUV light generation and reduced chamber size requirements, thereby resolving the contradiction between neutralization effectiveness and chamber volume.
2Reliability
If VUV light is used to remove static electricity from semiconductor substrates, then static electricity neutralization is achieved, but processing time is extended due to limited light coverage area
Solution Approach 1:
The patent segments the vacuum chamber into multiple zones with different vacuum degrees. The light source region maintains a high vacuum degree (10^-4 to 10^-6 Torr) for optimal VUV light generation, while the substrate processing region operates at a lower vacuum degree (10^-2 to 10^-4 Torr). This segmentation allows the use of smaller vacuum chambers while maintaining effective static electricity removal capability.
Solution Approach 2:
The patent changes the vacuum degree parameter across different regions of the vacuum chamber. By creating a gradient vacuum environment where the light source region has higher vacuum degree and the substrate region has lower vacuum degree, the system achieves both effective VUV light generation and reduced chamber size requirements, thereby resolving the contradiction between neutralization effectiveness and chamber volume.
3Use of energy by moving object
If high vacuum degree is maintained throughout the vacuum chamber, then VUV light generation is optimized, but the chamber size must be enlarged to accommodate large-area substrates
Solution Approach 1:
The patent segments the vacuum chamber into multiple zones with different vacuum degrees. The light source region maintains a high vacuum degree (10^-4 to 10^-6 Torr) for optimal VUV light generation, while the substrate processing region operates at a lower vacuum degree (10^-2 to 10^-4 Torr). This segmentation allows the use of smaller vacuum chambers while maintaining effective static electricity removal capability.
Solution Approach 2:
The patent changes the vacuum degree parameter across different regions of the vacuum chamber. By creating a gradient vacuum environment where the light source region has higher vacuum degree and the substrate region has lower vacuum degree, the system achieves both effective VUV light generation and reduced chamber size requirements, thereby resolving the contradiction between neutralization effectiveness and chamber volume.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient and rapid neutralization of static electricity on large-area semiconductor substrates without enlarging the vacuum chamber, reducing processing time and minimizing defects in semiconductor manufacturing.
Implementation Method 1
a diffractive optical element to expand the VUV light emitted from a VUV generator
Data Source
AI summary
An apparatus for removing static electricity of a semiconductor substrate, which removes static electricity embedded inside a thin film on the semiconductor substrate by emitting vacuum ultraviolet (VUV) light to the semiconductor substrate disposed inside a vacuum chamber. The apparatus includes: a VUV generator disposed at an upper side of the vacuum chamber and provided with a VUV lamp configured to emit small-area VUV light into an inside of the vacuum chamber; and a light diffusion unit disposed below the VUV generator and configured to diffuse incident VUV light into a wide area and output the diffused VUV light to the semiconductor substrate disposed below the light diffusion unit.