Wafer Backside Liquid Heating for Uniform Etching Temperature

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Solution Overview

Problem

Temperature fluctuations across wafers during etching processes lead to poor process control and etching uniformity, especially on larger 450 mm wafers, due to the use of high-temperature reactants and traditional etching methods.

Innovation Solution

Preheating or precooling the wafer before dispensing heated etchants using a controlled temperature-regulating system to minimize temperature variations and enhance uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional etching methods with high-temperature reactants are used, then etching capability is achieved, but temperature fluctuations across the wafer increase leading to poor process control

Engineering Contradiction:
Improveetching uniformityVSAvoidtemperature fluctuations
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The wafer is preheated to a predetermined temperature before the etching process begins. This preliminary temperature conditioning ensures that the wafer is at the optimal temperature when etching reactants are introduced, preventing temperature fluctuations during etching and achieving uniform etching across the wafer surface.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A temperature sensor continuously monitors the wafer temperature during the preheating and etching processes. The controller receives this temperature feedback and dynamically adjusts the heating power to maintain the wafer at the predetermined temperature, thereby eliminating temperature fluctuations and ensuring consistent etching uniformity.

Inventive Principle:
Principle #23Feedback

2Productivity

If heated etchants are dispensed directly onto the wafer, then etching reaction is initiated, but temperature variations across the wafer surface increase

Engineering Contradiction:
Improveetching rateVSAvoidtemperature uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The wafer is preheated to the target temperature before heated etchants are dispensed. This preliminary temperature preparation ensures that when the etchants contact the wafer, minimal temperature variation occurs, maintaining both high etching rate and excellent temperature uniformity across the wafer surface.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The temperature sensor continuously monitors wafer temperature during etchant dispensing, and the controller adjusts heating power in real-time to compensate for any temperature changes caused by etchant contact, thereby maintaining temperature uniformity while sustaining high etching productivity.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively regulates and controls temperature, reducing fluctuations and achieving better etching uniformity across the wafer by rapidly ramping temperature.

Implementation Method 1

dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

etching an etch layer of the wafer with an etchant during or after dispensing the liquid

Methodology Applied
Scientific EffectChemical etching: Chemical Bonding

Data Source

PatentUS20250299980A1Method for etching etch layer
Publication Date: 2025.09.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250299980A1 patent drawing
  • US20250299980A1 patent drawing
  • US20250299980A1 patent drawing

AI summary

A method includes adjusting a temperature of a liquid; after adjusting the temperature of the liquid, dispensing the liquid onto a backside of a wafer by progressively moving a dispensing position from a center of the wafer toward a peripheral edge of the wafer; etching a target layer on a front side of the wafer using an etchant.