Wafer Base Gas Wall Structure for Faster ALD Purging
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Solution Overview
Problem
Conventional semiconductor processing apparatuses using ALD technology face issues of low productivity due to long purging times and sealing parts with low service life and limited high-temperature applicability, leading to particle pollution and contamination.
Innovation Solution
A semiconductor processing apparatus with a flow guide structure and exhaust system that forms a gas wall between the process and transfer areas, using a vertically movable base to prevent process gas from entering the transfer area, eliminating the need for sealing parts and reducing purging time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the purging time is extended to remove reaction precursor, then particle pollution is prevented, but productivity is reduced
Solution Approach 1:
The process chamber is divided into a process area and a transfer area by a partition plate, allowing independent purging of the transfer area. This segmentation enables the reaction precursor to be removed from the transfer area without requiring extended purging of the entire chamber, thus preventing particle pollution while maintaining productivity.
Solution Approach 2:
An inert gas is introduced into the transfer area as an intermediary substance to prevent process gas from diffusing across the partition plate. This inert gas acts as a barrier that stops contaminant migration, eliminating the need for extended purging time and thereby maintaining high productivity.
2Object-affected harmful factors
If a partition plate is added to divide the process chamber, then gas isolation is improved, but gas diffusion through gaps still occurs requiring long purging time
Solution Approach 1:
An inert gas is introduced into the transfer area to act as an intermediary barrier that prevents process gas from diffusing through gaps in the partition plate. This approach achieves complete gas isolation without requiring extended purging time, as the inert gas continuously blocks contaminant migration across the partition interface.
3Object-affected harmful factors
If sealing parts are used to achieve complete physical isolation, then gas isolation is improved, but particle pollution from sealing parts and reduced service life occur
Solution Approach 1:
The invention removes sealing parts from the partition structure by using a partition plate with intentional gaps. This extraction eliminates the reliability issues associated with sealing parts such as particle generation, contamination, and limited service life, while still achieving effective gas isolation through the inert gas barrier approach.
Solution Approach 2:
The partition plate is designed without expensive sealing parts that require maintenance and replacement. The gap structure with inert gas barrier provides a simpler, more reliable solution that eliminates the need for serviceable sealing components, thereby improving overall system reliability and reducing maintenance requirements.
4Object-affected harmful factors
If sealing parts are used for physical isolation, then gas isolation is improved, but high-temperature applicability is limited
Solution Approach 1:
The invention removes sealing parts from the partition structure, eliminating their temperature limitations. The gap structure combined with inert gas barrier provides thermal stability and can operate at high temperatures without the degradation issues that plague elastomeric and polymer-based seals, thereby expanding the temperature range applicability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves efficient gas isolation, reducing purging time, preventing particle pollution, and enhancing productivity while maintaining applicability across various temperature ranges, thus reducing maintenance costs and improving equipment performance.
Implementation Method 1
the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area
Implementation Method 2
An exhaust structure is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position
Data Source
AI summary
A semiconductor processing apparatus includes a process chamber, a gas intake device, a base, and a flow guide structure. The process chamber includes a process area and a transfer area arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area. The base is vertically movable and is disposed in the transfer area for carrying a wafer. The flow guide structure is connected to a gas supply source, and fixedly attached to the base; and when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface. An exhaust structure is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position.