Wafer-Level Beam Profiling Probe for Large-NA Laser Characterization

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Solution Overview

Problem

Existing methods for beam profile characterization of integrated lasers and waveguides are too bulky and unsuitable for wafer-level testing, particularly for large numerical aperture (NA) light beams, and imaging techniques are limited by the clear aperture of relay lenses.

Innovation Solution

A miniaturized scanning probe is inserted into a trench etched in the wafer, comprising an aperture, folding prism, and multi-mode optical fiber, which redirects and focuses light beams for characterization, allowing wafer-level beam profiling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional scanning or imaging methods are used for beam profile characterization, then measurement precision can be achieved, but the device size becomes too bulky for wafer-level testing

Engineering Contradiction:

Improvebeam profile characterization accuracyVSAvoiddevice size

Core Design Contradiction:

Measurement precisionVSVolume of moving object

Solution Approach 1:

The patent embeds the beam profiling functionality directly within a trench structure etched into the wafer itself. The probing apparatus is nested within the wafer substrate, with the aperture and detection elements positioned inside the trench, allowing the measurement system to be integrated at the wafer level rather than requiring external bulky equipment

Inventive Principle:

Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent transitions from conventional planar or external beam profiling to a three-dimensional approach by etching trenches into the wafer and positioning detection elements within these subsurface structures. This vertical dimensionality change allows compact integration while maintaining measurement capability

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Measurement precision

If imaging techniques with relay lenses are used, then beam profile data can be obtained, but the clear aperture of the relay lens limits the ability to characterize large numerical aperture light beams

Engineering Contradiction:

Improvebeam profile data accuracyVSAvoidapplicability to large NA beams

Core Design Contradiction:

Measurement precisionVSAdaptability or versatility

Solution Approach 1:

The patent removes the relay lens from the optical path entirely, replacing it with a direct imaging approach where the aperture is positioned at the beam waist and the detector is placed in the far field. This extraction of the limiting relay lens component eliminates the clear aperture constraint that previously prevented characterization of large NA beams

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent creates a direct optical mapping from the beam profile at the aperture plane to the detector plane through far-field diffraction patterns, eliminating intermediate optical elements. This direct copying approach preserves the full angular distribution of large NA beams without the aperture limitations of relay lenses

Inventive Principle:

Principle #26Copying

3Productivity

If wafer-level beam profiling is implemented, then manufacturing efficiency and throughput are improved, but the complexity of integrating probing apparatus into wafer trenches increases

Engineering Contradiction:

Improvemanufacturing throughputVSAvoidprobing apparatus integration complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent combines multiple functions into the single trench structure: the trench serves as both the housing for the probing apparatus and the structural feature for beam confinement. The aperture, detection elements, and mounting structure are merged into one integrated subsurface assembly, simplifying the overall integration process despite the advanced functionality

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The wafer structure itself provides the mounting and positioning framework for the probing apparatus through the etched trench. The trench walls and floor serve as the mechanical support and alignment references, eliminating the need for separate complex mounting structures and reducing integration complexity

Inventive Principle:

Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables quick, low-cost, and high-throughput beam profile characterization at the wafer level, improving manufacturing efficiency and reducing costs by enabling near-perfect screening and efficient data collection without sample preparation.

Implementation Method 1

the folding prism is configured to redirect the allowed light beam to the multi-mode optical fiber

Methodology Applied

Scientific EffectRefraction: Refraction

Implementation Method 2

the aperture is configured to allow light beams within a numerical aperture range of 0.05 to 0.35 to pass through

Methodology Applied

Scientific EffectDiffraction: Diffraction

Data Source

PatentUS12517312B2Systems and methods for wafer level beam profile characterization

Publication Date: 2026.01.06 INTEL CORP

AI summary

An apparatus includes an aperture disposed through an outer layer, a folding prism adjacent to the aperture, and a multi-mode optical fiber on which the folding prism is disposed. The aperture and the folding prism are insertable into a trench disposed through a waveguide of an edge emitting integrated laser, the aperture is configured to allow a light beam that is emitted by the waveguide, through the aperture, and the folding prism is configured to redirect the allowed light beam to the multi-mode optical fiber.