Wafer Bonding Edge Void Reduction via Condensation Suppression
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Solution Overview
Problem
Conventional methods of bonding semiconductor wafers often result in edge voids on the peripheral portions of the bonded substrates, leading to reduced yield as these voided areas cannot be used as products.
Innovation Solution
A bonding system that includes a surface modifying apparatus for plasma treatment, a hydrophilizing apparatus for surface modification, and a bonding apparatus with a condensation suppressing gas discharge unit to reduce edge voids by preventing condensation between the substrates during bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used to bond semiconductor wafers, then the bonding process can be completed, but edge voids occur on the peripheral portions of the bonded substrates
Solution Approach 1:
A condensation suppressing gas (such as nitrogen or carbon dioxide) is introduced as an intermediary substance between the bonding surfaces to prevent condensation of moisture during the bonding process. The gas flows into the bonding region through supply ports, creating a protective atmosphere that suppresses condensation and prevents edge void formation while maintaining effective bonding through Van der Waals forces and hydrogen bonding.
2Strength
If plasma treatment and hydrophilization are applied to bonding surfaces, then bonding strength is improved, but the process complexity increases
Solution Approach 1:
The bonding surfaces undergo preliminary treatment including plasma treatment to modify surface properties and hydrophilization to enhance surface energy before the actual bonding process. These preliminary actions prepare the surfaces to maximize bonding strength through intermolecular forces, ensuring optimal bonding conditions are established prior to substrate contact.
Solution Approach 2:
The surface properties are modified by changing physical and chemical parameters through plasma treatment (altering surface morphology and composition) and hydrophilization (changing surface energy and wettability). These parameter changes enable the surfaces to achieve maximum bonding strength through enhanced intermolecular interactions.
3Productivity
If the bonding surfaces are allowed to contact directly, then bonding efficiency is high, but condensation occurs leading to edge voids
Solution Approach 1:
Condensation suppressing gas is introduced as a mediator between the bonding surfaces to prevent moisture condensation during the bonding process. The gas creates a protective atmosphere that eliminates the harmful condensation effect while allowing the bonding surfaces to remain in close contact for efficient bonding through Van der Waals forces and hydrogen bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively reduces edge voids on bonded substrates by using plasma treatment and hydrophilization, combined with the discharge of a condensation suppressing gas, thereby enhancing the bonding process and increasing yield.
Implementation Method 1
The surface modifying apparatus is configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate with plasma
Implementation Method 2
The surface hydrophilizing apparatus is configured to hydrophilize the bonding surface of the first substrate and the bonding surface of the second substrate
Implementation Method 3
bonding the hydrophilized substrates to each other by Van der Waals force and hydrogen bonding (intermolecular force)
Implementation Method 4
bonding the hydrophilized substrates to each other by Van der Waals force and hydrogen bonding (intermolecular force)
Implementation Method 5
a condensation suppressing gas discharge unit configured to discharge a condensation suppressing gas for suppressing condensation toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate
Data Source
AI summary
A bonding system includes a surface modifying apparatus, a surface hydrophilizing apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate with plasma. The surface hydrophilizing apparatus is configured to hydrophilize the modified bonding surfaces of the first substrate and the second substrate. The bonding apparatus includes a condensation suppressing gas discharge unit, and is configured to bond the hydrophilized bonding surfaces of the first substrate and the second substrate by an intermolecular force. The condensation suppressing gas discharge unit is configured to discharge a condensation suppressing gas toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate facing each other.