Sealed Wafer Bonding Space to Prevent Condensation Voids
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Solution Overview
Problem
The direct bonding process in semiconductor manufacturing often results in void defects due to water vapor condensation between wafers, leading to deterioration of the bonded wafers.
Innovation Solution
A substrate bonding apparatus and method that utilize a sealed bonding space with a process gas supply device to control temperature and pressure, reducing water vapor condensation and improving bonding quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If direct bonding process is used to bond wafers, then bonding efficiency is improved, but water vapor condensation occurs causing void defects
Solution Approach 1:
The patent introduces a process gas (such as nitrogen or other inert gases) into the bonding space to displace water vapor and create an inert atmosphere during the direct bonding process. This prevents water vapor condensation that causes void defects, thereby maintaining high bonding efficiency while improving bonding quality and reducing defects.
2Device complexity
If temperature and pressure are not controlled during bonding, then process simplicity is maintained, but water vapor condensation causes void defects
Solution Approach 1:
The patent implements control of temperature and pressure parameters within the bonding space to prevent water vapor condensation. By maintaining appropriate temperature above dew point and controlling pressure conditions, the process eliminates void defects while keeping the overall process relatively simple through parameter optimization rather than complex structural modifications.
3Reliability
If process gas is supplied to bonding space, then water vapor condensation is reduced, but device complexity increases
Solution Approach 1:
The patent uses process gas as an intermediary substance introduced into the bonding space to prevent water vapor condensation. The gas acts as a mediator that displaces moisture and maintains favorable bonding conditions, improving reliability while the complexity increase is managed through the relatively simple gas supply system integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sealed bonding space with controlled temperature and pressure effectively reduces void defects and improves the reliability of the bonding process by minimizing water vapor condensation and ensuring uniform temperature and pressure conditions.
Implementation Method 1
a process gas supply device configured to supply a process gas to the bonding space enclosed by the seal
Implementation Method 2
a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate, and configured to enclose a bonding space
Data Source
AI summary
A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.