Wafer Bonding Interface for High-Density Semiconductor Stacking
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Solution Overview
Problem
Existing semiconductor manufacturing technologies face challenges in increasing density and reducing costs while maintaining electrical performance and reliability.
Innovation Solution
A method of manufacturing a semiconductor device involves bonding a second device wafer to a first device wafer, forming a dielectric-to-dielectric and metal-to-metal bonding interface, and omitting the use of a de-bonding layer and certain processes to reduce thickness and increase density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a de-bonding layer and additional processes are used in wafer bonding, then bonding reliability is improved, but device thickness increases and density decreases
Solution Approach 1:
The patent removes the de-bonding layer from the bonding structure, eliminating an unnecessary component that increased device thickness without providing essential functionality. This extraction maintains bonding reliability through direct dielectric-to-dielectric and metal-to-metal bonding while reducing overall device thickness and increasing density.
2Strength
If more material layers are used in bonding, then bonding strength is improved, but manufacturing cost increases
Solution Approach 1:
The patent eliminates the de-bonding layer material from the bonding structure, reducing material usage and manufacturing cost. The bonding strength is maintained through direct contact between dielectric layers and metal layers without requiring additional protective or release layers.
3Reliability
If additional bonding processes are implemented, then bonding reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent removes the de-bonding layer elimination process from the manufacturing workflow, simplifying the overall process. By designing the bonding interface to function without a de-bonding layer, the patent reduces the number of manufacturing steps while maintaining bonding reliability through direct dielectric-to-dielectric and metal-to-metal bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of high-density semiconductor devices with improved electrical performance and reliability, while reducing costs by minimizing material thickness and eliminating unnecessary processes.
Implementation Method 1
a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer
Implementation Method 2
a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer
Data Source
AI summary
The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.