Wafer Bonding Structure With Heat Dissipation Layer for RF Circuits
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Solution Overview
Problem
Heat generated by semiconductor devices in monolithic radio frequency circuits degrades device performance due to inadequate heat dissipation, leading to linearity issues and voltage imbalances across stacked transistors.
Innovation Solution
A semiconductor structure is developed with a glass substrate and a heat dissipation layer, where the heat dissipation layer is integrated between or directly on top of the silicon nitride layer of the glass substrate, enhancing thermal conductivity and improving heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor devices are integrated in semiconductor wafers for monolithic radio frequency circuits, then device functionality is achieved, but heat accumulation occurs leading to degraded linearity and voltage imbalance
Solution Approach 1:
The patent introduces a heat dissipation layer as an intermediary component between the semiconductor devices and the glass substrate. This heat dissipation layer acts as a thermal mediator that facilitates heat transfer from the heat-generating semiconductor devices to the glass substrate, thereby resolving the heat accumulation problem while maintaining device functionality.
Solution Approach 2:
The patent employs a composite structure consisting of multiple layers including the glass substrate, heat dissipation layer, silicon nitride layer, and device layer. This composite material approach combines materials with different thermal properties to achieve effective heat management while maintaining electrical and mechanical performance of the radio frequency circuit.
2Temperature
If a heat dissipation layer is inserted into the glass substrate or device wafer, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The patent addresses the heat dissipation challenge by adding a new dimensional element to the structure - the heat dissipation layer inserted within the existing layered architecture. This dimensional addition provides a new thermal conduction pathway without fundamentally altering the planar layout of the semiconductor devices, thereby managing complexity while improving thermal performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of a high thermal conductivity heat dissipation layer within the semiconductor structure effectively mitigates heat-related performance issues, enhancing the linearity and stability of monolithic radio frequency circuits by efficiently dissipating heat.
Implementation Method 1
heat dissipation layer... enhancing thermal conductivity and improving heat dissipation
Data Source
AI summary
A semiconductor structure includes a glass substrate and a device structure. The glass substrate includes a glass layer, a heat dissipation layer and a silicon nitride layer stacked from bottom to top. The device structure includes at least one semiconductor device integrated in a device layer situated over the silicon nitride layer of the glass substrate. Or, the glass substrate includes a glass layer and a silicon nitride layer stacked from bottom to top. The device structure includes at least one semiconductor device integrated in a device layer, and a heat dissipation layer is stacked on the device layer, wherein the heat dissipation layer is bonded with the silicon nitride layer of the glass substrate. The present invention also provides a method of wafer bonding for manufacturing said semiconductor structure.