Wafer Bonding for Image Sensor Interconnects
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Solution Overview
Problem
Current semiconductor device manufacturing methods face challenges in efficiently integrating multiple semiconductor wafers with different functionalities into a single device, particularly in forming effective interconnect structures that allow for optimal electrical connections and reduced metal routing, which affects power consumption and operation speed.
Innovation Solution
The method involves bonding two semiconductor wafers with interconnect structures using wafer bonding techniques, where one wafer is inverted and bonded to another, and portions of the substrate are removed to expose contact pads, enabling flexible interconnect configurations and through-vias for vertical electrical connections, allowing for the integration of different semiconductor chips into a single device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor wafers are integrated using conventional methods, then device functionality is improved, but metal routing complexity and chip area increase
Solution Approach 1:
The patent utilizes the third dimension by bonding multiple semiconductor wafers vertically to form a stacked configuration. This vertical integration approach allows electrical connections between different functional layers to be made through vertical vias rather than extensive horizontal metal routing, thereby reducing metal routing complexity while maintaining device functionality.
Solution Approach 2:
The patent divides the semiconductor device into multiple separate wafers, each containing specific functional components (e.g., image sensor array, color filters, microlenses). These segmented wafers are then bonded together in a stacked configuration, allowing each layer to be optimized independently while reducing the overall metal routing requirements compared to a monolithic structure.
2Adaptability or versatility
If multiple semiconductor wafers are integrated using conventional methods, then device functionality is improved, but power consumption increases
Solution Approach 1:
By transitioning from planar to vertical integration, the patent reduces the total length of metal interconnects required to connect different functional components. Since power consumption in metal routing is proportional to resistance (which increases with length), the shortened vertical pathways significantly reduce overall power consumption while maintaining full device functionality.
3Adaptability or versatility
If multiple semiconductor wafers are integrated using conventional methods, then device functionality is improved, but operation speed decreases
Solution Approach 1:
The vertical stacking configuration reduces the physical distance that electrical signals must travel between functional components. This shortened signal path length, achieved by moving from horizontal to vertical connections through bonded interfaces, directly reduces signal propagation delay and improves operation speed while maintaining device functionality.
4Adaptability or versatility
If wafer bonding is performed with inverted orientation, then interconnect flexibility is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent performs preliminary processing steps (such as forming bonding interfaces, removing substrate portions, and creating contact pads) on each wafer before the bonding operation. This preliminary preparation ensures that when wafers are bonded in inverted orientation, the interconnect structures are already positioned and configured for optimal flexibility, while the precision requirements are managed through pre-established alignment features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of novel semiconductor and image sensor devices with reduced metal routing and chip area requirements, leading to lower power consumption and increased operation speeds, while providing a flexible manufacturing process for various configurations.
Implementation Method 1
bonding a first semiconductor wafer to a second semiconductor wafer
Data Source
AI summary
Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor wafer comprising a substrate and an interconnect structure coupled to the substrate. The method includes removing a portion of the substrate from the first semiconductor wafer to expose a portion of the interconnect structure.