Wafer Bonding Tool Infrared Bubble Detection
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Solution Overview
Problem
The increasing complexity of processing semiconductor devices with decreased feature sizes in integrated circuit manufacturing poses challenges in achieving precise and efficient wafer bonding, particularly due to the complexity of aligning and bonding wafers with reduced feature sizes and increased density.
Innovation Solution
A bonding tool system that includes a plasma module, cleaning module, and a bonding module with transparent chucks, infrared cameras, and a controller to perform plasma operations, cleaning, alignment, and bonding, using a pin to apply pressure and facilitate bonding while allowing for real-time alignment and detection of defects such as bubbles between bonded wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer bonding is performed with increased IC density and decreased feature sizes, then manufacturing capability is improved, but alignment precision and bonding quality deteriorate due to increased complexity
Solution Approach 1:
The patent employs infrared imaging to detect thermal radiation patterns that reveal bubble formations and alignment defects during wafer bonding. The infrared cameras capture thermal contrast changes that indicate bonding quality issues, enabling real-time detection without physical contact with the high-density IC structures.
Solution Approach 2:
The patent replaces traditional optical alignment systems with infrared thermal detection for quality monitoring. By using thermal radiation detection instead of optical microscopy, the system can identify bonding defects in high-density IC structures without being limited by the reduced feature sizes and increased complexity that challenge optical resolution.
2Device complexity
If traditional bonding methods are used, then process simplicity is maintained, but defect detection capability deteriorates due to inability to identify bubbles and misalignments
Solution Approach 1:
The patent introduces infrared cameras as an intermediary detection system that captures thermal radiation from the wafer bonding process. This intermediary enables non-contact, real-time monitoring of bonding quality, detecting bubbles and misalignments through thermal patterns without adding complex mechanical inspection systems to the bonding process.
Solution Approach 2:
The infrared imaging system provides real-time feedback on bonding quality by detecting thermal radiation patterns that indicate defects. This feedback mechanism allows for immediate identification of bubbles and misalignments during the bonding process, enabling quality control without disrupting the relatively simple bonding procedure.
3Productivity
If feature sizes are decreased to increase IC density, then manufacturing capacity is improved, but bonding alignment difficulty increases due to reduced feature dimensions
Solution Approach 1:
The patent substitutes optical alignment verification with infrared thermal detection. By monitoring thermal radiation patterns during bonding, the system can identify alignment issues and bubble formations without relying on optical resolution of the decreased feature sizes, thereby managing the increased bonding alignment difficulty associated with high-density IC manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This system enables precise and efficient bonding of wafers with improved alignment and detection of defects, enhancing the yield rate of wafer fabrication by ensuring accurate bonding and identifying and addressing any bubbles or misalignments during the process.
Implementation Method 1
an infrared camera is configured to capture an image of the first and second wafers after the second wafer support releases the second wafer
Implementation Method 2
A bonding tool system that includes a plasma module, cleaning module, and a bonding module
Data Source
AI summary
A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.


