Wafer Surface Activation for Bonding Without Plasma Circuit Damage
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Solution Overview
Problem
Wafer bonding processes often result in plasma-induced damage to integrated circuits due to the direct exposure of wafers to plasma, which can damage gate dielectrics and other components.
Innovation Solution
A wafer bonding apparatus and process that utilizes a plasma ion filter to remove charged particles from plasma, employing alternative activation methods such as laser, acid, or alkali to activate wafer surfaces without plasma contact, and a rinsing process to form OH bonds for bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma activation process is used to activate wafer surfaces for bonding, then bonding effectiveness is improved, but plasma-induced damage to integrated circuits occurs
Solution Approach 1:
The plasma is segmented into charged particles (ions and electrons) and uncharged particles (radicals and molecules). The charged particles are filtered out using electric or magnetic fields, while the uncharged particles are allowed to pass through and activate the wafer surface. This segmentation enables selective removal of harmful components while preserving beneficial activation effects.
Solution Approach 2:
The harmful charged particles (ions and electrons) are extracted from the plasma using electric or magnetic filters. This extraction process removes the damaging components while retaining the uncharged reactive species needed for surface activation, thereby preventing circuit damage while maintaining bonding effectiveness.
Solution Approach 3:
Electric or magnetic fields are introduced as intermediary means to separate charged from uncharged particles. These fields act as mediators that selectively interact with charged particles to filter them out, while allowing uncharged particles to pass through to activate the wafer surface without causing damage.
2Strength
If plasma is used for surface activation, then bonding strength is improved, but gate dielectric damage occurs
Solution Approach 1:
The harmful charged particles that cause gate dielectric damage are extracted from the plasma using electric or magnetic filters. This extraction preserves the bonding strength benefits from plasma activation while eliminating the damaging effects on sensitive gate dielectrics.
Solution Approach 2:
Electric or magnetic fields serve as intermediary mechanisms to selectively remove charged particles from the plasma. These fields enable the plasma to activate wafer surfaces for strong bonding without the charged particles that would otherwise damage gate dielectrics.
3Object-affected harmful factors
If plasma ion filter is introduced to remove charged particles, then circuit damage is prevented, but device complexity increases
Solution Approach 1:
Electric or magnetic fields are introduced as intermediary means to filter charged particles from plasma. While these fields add some complexity to the apparatus, they effectively prevent circuit damage by selectively removing harmful charged particles while allowing beneficial uncharged particles to pass through.
Solution Approach 2:
The plasma parameters are changed by selectively removing charged particles through electric or magnetic filtering. This parameter change transforms the plasma from a damaging state (with charged particles) to a safe state (with only uncharged particles), enabling circuit protection while maintaining activation effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents plasma-induced damage to wafer circuits by filtering out ions and using alternative activation methods, ensuring effective bonding without circuit damage.
Implementation Method 1
A wafer bonding apparatus and process are provided which utilize a plasma ion filter to remove charged particles from plasma
Implementation Method 2
employing alternative activation methods such as laser, acid, or alkali to activate wafer surfaces without plasma contact
Implementation Method 3
employing alternative activation methods such as laser, acid, or alkali to activate wafer surfaces without plasma contact
Implementation Method 4
a rinsing process to form OH bonds for bonding
Data Source
AI summary
A method includes performing a cleaning process on a first surface of a first wafer, and performing a surface activation process on the first surface. The surface activation process is selected from the group consisting of: a plasma surface activation process comprising generating a plasma from a process gas, wherein ions in the plasma are removed using a filter, and wherein a remaining uncharged part of the plasma is used to treat the first surface; a laser surface activation process using a laser beam; an acid surface activation process using an acid; and an alkali surface activation process using an alkali. After the surface activation process, a rinsing process is performed on the first surface. The first surface of the first wafer is bonded to a second surface of a second wafer.