Wafer Bonding Plasma Chamber Moisture Control Under Vacuum
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Solution Overview
Problem
The existing plasma processing apparatuses for wafer bonding struggle to maintain high bonding strength and prevent degradation over time due to a decrease in moisture levels within the vacuum plasma chamber, leading to reduced OH radical generation and subsequent bonding strength between wafers.
Innovation Solution
A plasma processing apparatus with a load lock chamber switchable between atmospheric and vacuum pressure states, incorporating a steam supply to maintain moisture levels by supplying water vapor into the plasma chamber before or during plasma generation, ensuring a consistent level of OH radical generation and enhanced bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a plasma processing apparatus maintains a vacuum state in the plasma chamber to increase productivity, then productivity is improved, but moisture levels decrease leading to reduced OH radical generation and bonding strength degradation
Solution Approach 1:
The plasma chamber maintains a continuous vacuum state for productivity while a steam supply system continuously introduces water vapor to maintain moisture levels. This continuous action ensures both high productivity through uninterrupted vacuum plasma processing and reliable bonding strength through sustained OH radical generation.
Solution Approach 2:
The system changes the physical-chemical parameters of the vacuum environment by introducing controlled amounts of water vapor through the steam supply. This modifies the composition of the vacuum atmosphere to maintain optimal moisture levels for OH radical generation while preserving the vacuum state for plasma processing.
2Productivity
If the plasma chamber is kept in a vacuum state at all times, then processing efficiency is improved, but bonding strength decreases over time due to moisture depletion
Solution Approach 1:
The steam supply system proactively introduces water vapor into the plasma chamber before moisture levels drop to critical thresholds. This preliminary action prevents bonding strength degradation before it occurs, maintaining both processing efficiency and bonding quality over extended operational periods.
Solution Approach 2:
The system monitors bonding strength and moisture levels over time, using this feedback to adjust steam supply rates. This closed-loop control ensures the plasma chamber maintains optimal moisture conditions for sustained bonding strength while preserving processing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution maintains high bonding strength between wafers by increasing and sustaining OH radical generation within the plasma chamber, even in a vacuum state, thereby preventing a decrease in bonding strength over time.
Implementation Method 1
a steam supply configured to supply a water vapor into the plasma chamber
Implementation Method 2
a plasma generator configured to generate a plasma in the plasma chamber
Data Source
AI summary
A plasma processing apparatus includes a load lock chamber switchable between an atmospheric pressure state and a vacuum pressure state, and a substrate processing apparatus configured to transfer a substrate to and from the load lock chamber and to perform a plasma process on a surface of the substrate in a plasma chamber under a vacuum atmosphere. The substrate processing apparatus includes a substrate stage disposed within the plasma chamber and configured to support the substrate, a plasma gas supply configured to supply a plasma gas into the plasma chamber, a steam supply configured to supply a water vapor into the plasma chamber, and a plasma generator configured to generate a plasma in the plasma chamber.