Wafer Bonding via Self-Assembling Molecular Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The bonding performance of wafer bonding structures in 3D IC technology is not satisfactory due to difficulties in accurately controlling the thickness of interlayer dielectric and bonding layers, leading to unacceptable bonding quality and gaps between wafers.
Innovation Solution
A wafer bonding method involving the formation of self-assembling molecular layers on the surfaces of interlayer dielectric layers, which precisely control the thickness and facilitate bonding between wafers by fixing the bonding layers and dielectric layers together, preventing gaps and improving bonding quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional wafer bonding methods are used, then the bonding process can be completed, but the bonding quality is unacceptable due to gaps between wafers and imprecise thickness control
Solution Approach 1:
A self-assembling molecular layer is introduced as an intermediary between the interlayer dielectric layers and bonding layers. This molecular layer precisely controls the thickness and spacing during wafer bonding, eliminating gaps and ensuring high bonding quality without compromising reliability
Solution Approach 2:
The patent changes the thickness parameter of the molecular layer to precisely control the spacing between wafers during bonding. By optimizing the molecular layer thickness, the bonding quality is improved while maintaining acceptable bonding performance through precise parameter control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the bonding quality of wafers by precisely controlling the thickness of the self-assembling molecular layer, ensuring accurate alignment and bonding, thereby improving the integration level and performance of 3D ICs.
Implementation Method 1
forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer
Implementation Method 2
the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer
Data Source
AI summary
Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.