Semiconductor Wafer Bonding with Plasma-Released Fluorine
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Solution Overview
Problem
Existing technologies for bonding semiconductor wafers often damage equipment due to the introduction of fluorine as a process gas, which is not effectively controlled, leading to unsatisfactory bonding results.
Innovation Solution
A method and apparatus that use a fluorine-free plasma to release fluorine from components with a fluorinated coating, allowing for the incorporation of fluorine into the bonding surfaces of semiconductor wafers without exposing the equipment to gaseous fluorine, enhancing bonding energy while protecting the equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If fluorine is introduced as a process gas for bonding semiconductor wafers, then bonding energy is improved, but equipment is damaged
Solution Approach 1:
A fluorinated coating is applied to the chamber components as an intermediary source of fluorine. The coating releases fluorine atoms during plasma processing, providing the necessary fluorine for bonding without requiring gaseous fluorine that would damage equipment. The fluorinated coating acts as a controlled reservoir that delivers fluorine precisely where needed while protecting the equipment from harmful gaseous fluorine exposure.
Solution Approach 2:
The invention changes the physical and chemical parameters of fluorine delivery by transitioning from gaseous fluorine to a solid fluorinated coating that releases fluorine atoms through plasma activation. This parameter change allows fluorine to be delivered in a controlled, localized manner at the chamber surfaces, providing high bonding energy at the wafer interface while preventing widespread equipment damage.
2Manufacturing precision
If gaseous fluorine is used for bonding, then bonding results are improved, but control over fluorine distribution is insufficient
Solution Approach 1:
The fluorinated coating is applied specifically to the chamber components that come into contact with the semiconductor wafers during bonding. This localized application ensures that fluorine is released precisely where it is needed - at the bonding interface - rather than being distributed throughout the entire chamber. The local quality of fluorine delivery enhances bonding results while preventing excessive fluorine accumulation in other areas.
Solution Approach 2:
The chamber components are pre-coated with fluorinated material before the bonding process. This preliminary action ensures that fluorine is already positioned and ready to be released during plasma processing, providing precise control over when and where fluorine is delivered to the wafer surfaces, thereby improving bonding precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This gasless fluorine-incorporation technique increases the bonding energy between semiconductor wafers while preventing damage to the equipment, enabling robust and efficient bonding using techniques like direct dielectric bonding, hybrid bonding, or BCB polymer adhesive bonding.
Implementation Method 1
applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer
Data Source
AI summary
A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.