Wafer Bonding Pressure Feedback for Uniform Bonding Wave Velocity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing wafer bonding technologies face challenges in achieving uniform bonding wave velocity, leading to distortion and unfavorable patterning shape changes due to stress and strain variations in bonded wafer pairs.
Innovation Solution
A wafer bonding system that utilizes distance sensors to monitor the gap between wafers in real time, allowing for the modulation of vacuum pressure in vacuum zones on a wafer chuck to control and uniformize the bonding wave velocity, thereby reducing distortion by adjusting pressure distribution radially and angularly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional wafer bonding methods are used without real-time monitoring, then the bonding process is simpler, but the bonding wave velocity becomes non-uniform causing distortion and shape changes
Solution Approach 1:
The patent implements real-time feedback control by monitoring bonding wave velocity with sensors and adjusting vacuum pressure dynamically. The system measures the actual bonding wave velocity and uses this feedback to modulate vacuum pressure, ensuring uniform bonding across the wafer surface while maintaining controlled system complexity through automated control algorithms.
Solution Approach 2:
The patent applies dynamic control by continuously modulating vacuum pressure during the bonding process rather than using static pressure. This dynamic adjustment allows the system to adapt to varying bonding conditions in real-time, achieving uniform bonding wave velocity while managing system complexity through programmable control mechanisms.
2Stability of the object's composition
If vacuum pressure is not modulated during bonding, then the process is easier to control, but distortion and stress variations occur in bonded wafers
Solution Approach 1:
The patent applies preliminary action by pre-programming vacuum pressure modulation profiles based on expected bonding wave propagation patterns. The system prepares and executes predetermined pressure adjustment sequences before and during bonding, ensuring wafer shape stability while simplifying operation through automated execution of pre-planned pressure control strategies.
Solution Approach 2:
The patent implements parameter changes by dynamically adjusting vacuum pressure levels during the bonding process. The system modifies pressure parameters in response to real-time bonding conditions, maintaining wafer shape stability while managing operational complexity through automated parameter control algorithms.
3Manufacturing precision
If real-time distance monitoring and vacuum modulation are implemented, then bonding wave velocity uniformity improves, but the system becomes more complex
Solution Approach 1:
The patent uses feedback control where distance sensors monitor wafer positioning and bonding wave progression in real-time, and this information feeds back to automatically adjust vacuum pressure. This closed-loop feedback system achieves high patterning accuracy while managing complexity through automated control algorithms that process sensor data and execute pressure adjustments.
Solution Approach 2:
The patent applies universality by designing the vacuum pressure modulation system to serve multiple functions: controlling wafer positioning, regulating bonding wave velocity, and maintaining uniform pressure distribution. This multi-functional approach achieves high patterning accuracy while reducing overall system complexity by consolidating control functions into a single integrated system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves a more uniform bonding wave velocity, reducing distortion and stress-related issues in bonded wafer pairs, resulting in improved patterning accuracy and reduced shape changes.
Implementation Method 1
a second wafer chuck (418) having a second surface (424) to support a second wafer (200)
Implementation Method 2
a plurality of distance sensors (416) mounted on the first wafer chuck (410), the plurality of distance sensors (416) being connected to a controller (380)
Data Source
AI summary
A method includes mounting a first wafer on a first wafer chuck and mounting a second wafer on a second wafer chuck. The second wafer is brought into physical contact with the first wafer. A relative distance between the first wafer and the second wafer is monitored using a distance sensor. A pressure of a vacuum zone on the second wafer chuck is controlled using feedback from the distance sensor. The bonded first wafer and second wafer are removed from the first wafer chuck.


