Dual-Plate Wafer Burn-In Contact Assembly for Mixed-Voltage Tests

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Solution Overview

Problem

Existing burn-in test apparatuses face challenges in efficiently performing both high-voltage and low-voltage tests on integrated circuits at a wafer level, leading to oversizing of components and increased energy and cost expenditures.

Innovation Solution

A burn-in apparatus with separate contact plates for high-voltage and low-voltage tests within a single chamber, utilizing actuators to vertically move an intermediate housing for precise contact with either set of contacts, and a shell with integrated heating and cooling for thermal control without external heating sources.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the circuitry and contacts are sized to withstand the maximum applied voltage for high-voltage tests, then high-voltage testing capability is achieved, but component oversizing occurs for low-voltage applications

Engineering Contradiction:
Improvehigh-voltage testing capabilityVSAvoidcomponent oversizing
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The contact device is divided into separate first and second contact plates, each dedicated to specific voltage ranges. The first contact plate handles high-voltage tests while the second contact plate handles low-voltage tests, eliminating the need for oversized components in low-voltage applications.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The intermediate housing can be displaced vertically to selectively connect different contact plates to the BID. This dynamic reconfiguration allows the system to adapt between high-voltage and low-voltage testing modes, using only the appropriately sized components for each test type.

Inventive Principle:
Principle #15Dynamics

2Ease of manufacture

If separate circuitries and contacts are used for high-voltage and low-voltage tests, then component costs are reduced, but device complexity increases

Engineering Contradiction:
Improvecomponent costsVSAvoidcontact device structure
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

Both high-voltage and low-voltage contact plates are integrated into a single contact device assembly with a common intermediate housing. This unified structure allows separate circuitries to share mechanical support, alignment features, and control mechanisms, reducing overall device complexity despite having multiple contact plates.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The intermediate housing serves multiple functions: it supports both contact plates, provides vertical displacement capability, and interfaces with the BID. This multi-functional design consolidates what could be separate complex assemblies into a single integrated component.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Productivity

If a single chamber is used for both high-voltage and low-voltage tests, then productivity is improved, but electrical isolation requirements increase

Engineering Contradiction:
Improvetesting efficiencyVSAvoidelectrical isolation
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The high-voltage circuitry is electrically isolated by extracting it onto a separate first contact plate that can be selectively connected. When low-voltage tests are performed, the high-voltage contact plate remains disconnected, automatically providing electrical isolation without requiring complex shielding or isolation circuits in the shared chamber.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentEP4664115A1Burn-in test apparatus arranged for high-voltage and low-voltage tests
Publication Date: 2025.12.17 MICROTEST SPA
  • EP4664115A1 patent drawingFigure 1~2
  • EP4664115A1 patent drawingFigure 3~5
  • EP4664115A1 patent drawingFigure 6~8

AI summary

Burn-in apparatus comprising at least one rack and a plurality of chambers to receive a respective plurality of wafers to be tested, each one housed on a dedicated BID (5), wherein each chamber comprises a contact device (400) which is capable of contacting said BID (5), said contact device (400) comprising a first contact plate (404), provided with electrical contacts for high-voltage tests (404'), which are capable of contacting first electrical contacts (51) of said BID (5) and a second contact plate (405), provided with electrical contacts for low-voltage tests (405'), which are capable of contacting second electrical contacts (52) of said BID (5)