Semiconductor Wafer Separation Using a Modifiable Carbon Interface
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Solution Overview
Problem
Current semiconductor device manufacturing methods involve time-consuming grinding and high material consumption, limiting reuse possibilities and potentially causing defects due to wafer splitting, which increases costs and electrical resistance.
Innovation Solution
A method involving forming a carbon structure on a handle substrate, attaching a semiconductor substrate, processing it, and performing a separation process that modifies the carbon structure to separate the substrates, allowing for efficient reuse and reduced defects by optimizing bonding strength and material utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If grinding is used to reduce electrical resistance, then electrical resistance is reduced, but manufacturing time increases and material consumption increases
Solution Approach 1:
The patent applies preliminary action by forming a carbon structure on the handle substrate before attaching the semiconductor substrate. This carbon structure is specifically designed to facilitate subsequent separation processes, allowing the semiconductor substrate to be released without time-consuming grinding operations. The carbon structure acts as a pre-prepared separation interface that enables rapid substrate release while maintaining electrical performance.
Solution Approach 2:
The patent extracts the separation function from the traditional grinding process by introducing a dedicated carbon structure layer. This carbon structure is specifically designed to be modified and removed during separation, allowing the semiconductor substrate to be released without damaging the device elements. This extraction of the separation function enables independent optimization of both the device formation process and the substrate release process.
2Reliability
If grinding is used to reduce electrical resistance, then electrical resistance is reduced, but material consumption increases
Solution Approach 1:
The patent extracts the separation function from the traditional grinding process by introducing a dedicated carbon structure layer. This carbon structure is specifically designed to be modified and removed during separation, allowing the semiconductor substrate to be released without damaging the device elements. This extraction of the separation function enables independent optimization of both the device formation process and the substrate release process.
Solution Approach 2:
The patent applies discarding and recovering by designing the carbon structure to be selectively removed after serving its purpose as a separation interface. The carbon structure is discarded after enabling the substrate release, while the semiconductor substrate and handle substrate are recovered for further processing or reuse. This approach minimizes material waste compared to traditional grinding that removes substantial amounts of semiconductor material.
3Adaptability or versatility
If wafer splitting is used to enable reuse, then reuse concepts are enabled, but defects increase and electrical resistance increases
Solution Approach 1:
The patent introduces a carbon structure as an intermediary layer between the handle substrate and the semiconductor substrate. This carbon structure serves as a mediator that facilitates controlled separation without directly splitting the semiconductor substrate. By using this intermediary, the separation process avoids creating defects in the semiconductor material while still enabling substrate reuse. The carbon structure absorbs the mechanical stress and provides a clean separation interface.
Solution Approach 2:
The patent replaces the traditional mechanical splitting process with a chemical modification approach. Instead of applying mechanical force to split the wafer (which creates defects), the carbon structure is modified through chemical processes such as oxygen plasma treatment or laser irradiation. This substitution of mechanical separation with chemical modification of the carbon structure enables defect-free substrate release while maintaining reuse capability.
4Ease of manufacture
If traditional separation methods are used, then substrate separation is achieved, but device elements may be damaged
Solution Approach 1:
The patent introduces a carbon structure as an intermediary layer between the handle substrate and the semiconductor substrate. This carbon structure serves as a mediator that facilitates controlled separation without directly splitting the semiconductor substrate. By using this intermediary, the separation process avoids creating defects in the semiconductor material while still enabling substrate reuse. The carbon structure absorbs the mechanical stress and provides a clean separation interface.
Solution Approach 2:
The patent replaces the traditional mechanical splitting process with a chemical modification approach. Instead of applying mechanical force to split the wafer (which creates defects), the carbon structure is modified through chemical processes such as oxygen plasma treatment or laser irradiation. This substitution of mechanical separation with chemical modification of the carbon structure enables defect-free substrate release while maintaining reuse capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient separation of semiconductor substrates while minimizing material waste and defects, reducing manufacturing costs and improving semiconductor device performance by maintaining high bonding strength and protecting device elements from damage.
Implementation Method 1
The separation process may comprise modifying the carbon structure, in particular by absorbing laser radiation in the carbon structure
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.