Wafer Carrier Ring Flat Interface for Uniform Deposition Heating

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in achieving uniform thickness and uniformity of deposition layers on semiconductor wafers, which affects the final yield and functionality of integrated circuits.

Innovation Solution

The use of a carrier ring with a protrusion featuring a flat engaging surface that matches the flat edge of the semiconductor wafer, combined with a disc, ensures uniform heating and gas distribution, thereby improving layer thickness uniformity during deposition processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional carrier rings without flat engaging surfaces are used, then the device complexity is reduced, but the manufacturing precision of deposition layers deteriorates due to non-uniform heating and gas distribution

Engineering Contradiction:

Improvelayer thickness uniformityVSAvoidcarrier ring structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The carrier ring is designed with a flat engaging surface at a specific location to match the flat edge of the semiconductor wafer. This localized modification creates a flat engagement interface that ensures uniform heating and gas distribution across the wafer surface during deposition, thereby improving layer thickness uniformity without requiring complete redesign of the entire carrier ring structure

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The carrier ring introduces asymmetry by incorporating a flat engaging surface that corresponds to the flat edge of the wafer, breaking the rotational symmetry of the conventional circular carrier ring. This asymmetric design ensures proper orientation and uniform contact between the carrier ring and wafer, leading to improved manufacturing precision during deposition processes

Inventive Principle:

Principle #4Asymmetry

2Reliability

If proper application of multiple layers is achieved through uniform coating, then the final yield of functional circuits is improved, but the use of energy increases due to extended processing steps

Engineering Contradiction:

Improvefinal yield of functional circuitsVSAvoidenergy consumption during processing

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The flat engaging surface of the carrier ring performs preliminary action by ensuring uniform wafer positioning and contact before the deposition process begins. This pre-positioning prevents non-uniform coating during deposition, thereby improving the final yield of functional circuits without requiring additional corrective processing steps that would consume extra energy

Inventive Principle:

Principle #10Preliminary action

3Productivity

If uniform material coating is applied in an economical and efficient manner, then the productivity increases, but the manufacturing precision of layer thickness may deteriorate

Engineering Contradiction:

Improvecoating efficiencyVSAvoidcoating uniformity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The flat engaging surface is strategically positioned at the location where the wafer's flat edge contacts the carrier ring. This localized flat surface ensures uniform distribution of heating and gas flow across the wafer during deposition, achieving both high coating efficiency and uniform layer thickness without requiring complex additional equipment

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the uniformity of material layers on semiconductor wafers, leading to improved electrical properties and reduced production time and costs by minimizing the need for rework and adjustments.

Implementation Method 1

The carrier ring and the disc are heated to control a temperature of the semiconductor wafer

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

supplying a processing gas over the semiconductor wafer

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20250285907A1Method and apparatus for processing semiconductor wafer

Publication Date: 2025.09.11 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor processing apparatus is provided. The apparatus includes a platen, a carrier ring and a disc. The platen has an opening formed on an upper surface of the platen. The carrier ring is positioned in the opening of the platen. The carrier ring includes a ring body and a protrusion connected to an inner circumference surface of the ring body, the protrusion has a flat engaging surface at its free end. The disc is positioned in the opening of the platen and surrounded by the carrier ring.