Wafer Chip Electrical Simulation From Spectroscopic Process Data
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Solution Overview
Problem
Current semiconductor fabrication processes cannot detect electrical abnormalities in real time during the manufacturing process, leading to wasted resources due to the inability to associate geometric and electrical parameters effectively, resulting in electrical issues being identified only at the final test phases.
Innovation Solution
A method is introduced that constructs a database with spectroscopic and electrical data from key processes, allowing for the simulation of electrical properties of a wafer chip by correlating spectroscopic data with actual electrical data, enabling timely detection and correction of abnormalities before subsequent processes are completed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If OCD is used to measure geometric parameters, then geometric structural parameters can be obtained in real time, but electrical parameters cannot be detected
Solution Approach 1:
The patent introduces spectroscopic data as an intermediary that bridges geometric structure and electrical parameters. The spectroscopic data, obtained through OCD, serves as a mediator that can be correlated with electrical parameters through a database, enabling indirect detection of electrical properties without direct electrical measurement at intermediate process stages
Solution Approach 2:
The patent creates a correspondence database that copies the relationship between spectroscopic data and electrical parameters from fully processed wafers. This copied relationship is then applied to intermediate process stages, allowing electrical parameter estimation without direct measurement
2Reliability
If electrical parameters are measured only at M0_WAT or final probe test phase, then electrical abnormalities can be detected, but resource waste occurs due to continued processing of defective wafers
Solution Approach 1:
The patent performs preliminary electrical parameter estimation at intermediate process stages using spectroscopic data and the correspondence database. This preliminary action allows early identification of electrical abnormalities before final testing, enabling timely decisions to prevent further processing of defective wafers and reduce resource waste
Solution Approach 2:
The patent establishes a feedback mechanism where spectroscopic data from intermediate stages is continuously correlated with electrical parameters through the database. This feedback loop enables real-time monitoring and early detection of electrical abnormalities, allowing process adjustments or wafer rejection before significant resource investment
3Loss of information
If the relationship between geometric and electrical parameters is established, then electrical parameters can be inferred from OCD data, but the instability of semiconductor process at microscopic level prevents fixed shape relationships
Solution Approach 1:
The patent transitions from relying on fixed geometric shapes to using spectroscopic parameters that capture the optical properties of the semiconductor structure. These spectroscopic parameters are more stable and reliable for correlation with electrical parameters, even when microscopic geometric variations occur during processing
Data Source
AI summary
Provided is a method for simulating electricity of a wafer chip. The method includes: a database is constructed, the database including spectroscopic data of a semiconductor structure of the wafer chip obtained from a target key process, actual electrical data of the wafer chip, and a correspondence between the spectroscopic data and the actual electrical data; the target key process is performed on a target wafer chip to obtain the spectroscopic data of the semiconductor structure of the target wafer chip obtained from the target key process, the spectroscopic data being target spectroscopic data; the electrical data of the target wafer chip is simulated based on the obtained target spectroscopic data and the database, the electrical data being target electrical data.