Wafer Chucking Control via Dynamic Vacuum Pressure Feedback
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Solution Overview
Problem
In semiconductor manufacturing, existing wafer processing technologies face challenges in achieving uniform thermal distribution and minimizing warpage during processing, leading to non-uniform processing conditions and reduced yield rates due to excessive vacuum pressure and turbulent air, which affects the precision and reliability of semiconductor device production.
Innovation Solution
A wafer processing apparatus with a heating plate featuring vacuum ports, temperature sensors, and a dual power supply system, along with an electronic pressure regulator, is used to control temperature and vacuum pressure dynamically, allowing for precise warpage identification and optimal vacuum pressure application to maintain uniform processing conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vacuum pressure is increased to fix the wafer, then wafer fixing reliability is improved, but thermal non-uniformity increases due to turbulent air
Solution Approach 1:
The patent implements feedback control by monitoring temperature distribution across the heating plate using multiple temperature sensors and dynamically adjusting vacuum pressure through an electronic pressure regulator. The controller receives temperature information from sensors positioned at different locations (central and edge regions) and adjusts vacuum pressure accordingly to maintain uniform heating while securing wafer fixation, thus resolving the contradiction between fixing reliability and thermal uniformity
Solution Approach 2:
The system transitions from static vacuum pressure control to dynamic adjustment based on real-time temperature measurements. The electronic pressure regulator modifies vacuum pressure levels in response to temperature feedback, allowing the system to adapt to varying thermal conditions and wafer positions, thereby maintaining both reliable fixation and thermal uniformity under different operating conditions
2Temperature
If heating power is increased to maintain temperature, then temperature uniformity is improved, but energy consumption increases
Solution Approach 1:
The heating plate is divided into multiple heating regions with independent power supplies, allowing different power levels to be applied to different areas. Temperature sensors positioned at central and edge regions provide localized feedback, enabling the system to apply heating power selectively to specific regions that require it, thus maintaining temperature uniformity while minimizing overall energy consumption by avoiding unnecessary heating in already sufficient areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures uniform temperature control and minimizes warpage, improving the reliability and precision of semiconductor processing by optimizing vacuum pressure, thus enhancing the yield rate and reducing thermal non-uniformities.
Implementation Method 1
a heating device configured to heat the heating plate
Implementation Method 2
an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer disposed on the heating plate to the plurality of vacuum ports
Data Source
AI summary
A wafer processing apparatus is provided. The apparatus includes: a heating plate through which vacuum ports are formed; a plurality of temperature sensors; a heating device configured to heat the heating plate; first and second power supplies; temperature controllers to generate first and second feedback temperature control signals for controlling power output power supplies based on measurement values generated by the temperature sensors; an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer to the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator, and generate a feedback pressure control signal for controlling the electronic pressure regulator based on the first and second feedback temperature control signals.