Semiconductor Wafer Circular Concavity Rigidity
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Solution Overview
Problem
Semiconductor wafers with extremely thin thickness (50 μm or smaller) suffer from low rigidity, making them difficult to handle and prone to damage during processing.
Innovation Solution
Forming a circular concavity on the back of the semiconductor wafer corresponding to the device region, with the device region being relatively thin (100 μm or less) and the surplus region being relatively thick (250 μm or more), allowing for adequate rigidity and minimizing handling risks, using a grinding tool with arcuate grinding members or a toroidal grinding member to create the concavity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of moving object
If the thickness of the semiconductor wafer is rendered very small (50 μm or smaller) for downsizing and weight reduction, then the weight and size of the semiconductor device are reduced, but the rigidity of the semiconductor wafer is markedly low, making it difficult to handle and increasing the risk of damage
Solution Approach 1:
The patent applies local quality by creating a thickness difference between different regions of the wafer. The device region is ground to a thin thickness (50 μm or smaller) to reduce weight and size, while the surplus region maintains a larger thickness to provide rigidity and ease of handling. This localized differentiation allows the wafer to simultaneously achieve weight reduction and maintain structural strength.
2Length of moving object
If the thickness of the semiconductor wafer is rendered very small (50 μm or smaller) for downsizing, then the size of the semiconductor device is reduced, but the rigidity of the semiconductor wafer is markedly low, making it difficult to handle and increasing the risk of damage
Solution Approach 1:
The patent creates different thickness zones: the device region is thin (50 μm or smaller) to achieve downsizing, while the surplus region is thicker to provide rigidity for easy handling. This local differentiation allows the wafer to be both compact and easy to manipulate during processing.
Solution Approach 2:
The wafer is segmented into two functional regions with different thickness characteristics: the device region for compactness and the surplus region for handling. This segmentation allows each region to optimize its properties independently, with the surplus region acting as a handle or support structure during manufacturing processes.
3Length of moving object
If the entire back of the semiconductor wafer is ground to decrease the entire thickness, then the thickness of the semiconductor wafer is reduced to achieve downsizing, but the rigidity of the semiconductor wafer is markedly low, making it difficult to handle
Solution Approach 1:
Instead of uniformly grinding the entire back of the wafer, the patent selectively grounds only the device region to create a local thinning. The surplus region is left thicker to maintain overall wafer rigidity. This localized grinding approach allows thickness reduction in the device area while preserving structural strength through the thicker surplus region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the wafer's rigidity and reduces the risk of damage during handling and processing, while enabling effective downsizing and weight reduction of semiconductor devices.
Implementation Method 1
forming a circular concavity in the back of the semiconductor wafer to decrease the thickness of the device region... using a grinding tool with arcuate grinding members or a toroidal grinding member to create the concavity
Data Source
AI summary
A semiconductor wafer which is generally circular, and which has on its face an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device region having many semiconductor devices disposed therein. A circular concavity is formed in the back of the semiconductor wafer in correspondence with the device region, and the device region is relatively thin, while the surplus region is relatively thick.