Wafer Cooling Rate Control via Chamber Pressure Feedback
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Solution Overview
Problem
In semiconductor manufacturing, particularly for technologies below 28 nm, the rapid temperature change rate of wafers during cooling processes leads to excessive particle contamination, which is critical as even small particles can cause significant damage to the wafer process results.
Innovation Solution
A temperature change rate control device is implemented in the process chamber of a semiconductor process apparatus, comprising a temperature monitor unit, a controller, a gas inflation mechanism, and a gas extraction mechanism. This device monitors the wafer's temperature in real-time, calculates the temperature change rate, and adjusts the pressure in the process chamber by controlling the introduction and extraction of inert gases to maintain the temperature change rate within a predetermined range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If rapid cooling is applied to the wafer, then cooling efficiency is improved, but particle contamination increases
Solution Approach 1:
The patent changes the pressure parameter of the process chamber to control the temperature change rate. By adjusting pressure from high to low (or vice versa), the system modulates heat transfer rates to achieve controlled cooling that prevents particle generation while maintaining efficiency
Solution Approach 2:
The patent implements a feedback control system where the temperature change rate is continuously monitored and used to adjust pressure control signals. The controller receives temperature data, calculates the rate of change, and dynamically adjusts pressure to maintain the temperature change rate within a predetermined range, preventing particle contamination
2Device complexity
If temperature change rate is not controlled, then process simplicity is maintained, but manufacturing precision deteriorates
Solution Approach 1:
The system uses the wafer's own temperature data to control its cooling process. The temperature monitor unit continuously measures wafer temperature, and this information feeds back to the controller which automatically adjusts pressure to maintain appropriate temperature change rates, making the system self-regulating
Solution Approach 2:
The pressure control mechanism serves multiple functions: it controls the temperature change rate during cooling, maintains process chamber pressure, and prevents particle contamination. The gas inflation and extraction mechanisms are used both for pressure control and temperature management
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls the temperature change rate of wafers, reducing particle contamination and improving the productivity of semiconductor manufacturing processes by ensuring precise temperature adjustments and maintaining optimal cooling rates.
Implementation Method 1
The gas inflation mechanism is configured to introduce a gas that does not react with the wafer into the process chamber according to the received first control signal to control the temperature change rate of the wafer by adjusting a pressure of the process chamber
Implementation Method 2
The gas extraction mechanism is configured to extract the gas of the process chamber according to the received second control signal to control the temperature change rate of the wafer by adjusting the pressure of the process chamber
Implementation Method 3
The temperature monitor unit is configured to obtain a temperature of a wafer in the process chamber in real time
Data Source
AI summary
Embodiments of the present disclosure provide a temperature change rate control device, applied to a process chamber of a semiconductor process apparatus, including a temperature monitor unit, a controller, a gas inflation mechanism, and a gas extraction mechanism. The temperature monitor unit is configured to obtain a temperature of a wafer in the process chamber in real time. The controller is configured to calculate a temperature change rate of the wafer according to the temperature obtained by the temperature monitor unit. The gas inflation mechanism communicates with the process chamber. The gas extraction mechanism communicates with the process chamber. When the temperature change rate is outside a predetermined temperature change rate range, a first control signal is sent to the gas inflation mechanism, and/or a second control signal is sent to the gas extraction mechanism to control the temperature change rate within the temperature change rate range.