Semiconductor Wafer Defect Inspection via Coordinate Merging

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Solution Overview

Problem

The miniaturization of semiconductor manufacturing processes has made it challenging to balance high throughput and defect detection accuracy, as microscopic defects are difficult to detect without increasing manufacturing noise and reducing throughput, especially when using optical inspection devices, and existing methods do not effectively address systematic defects.

Innovation Solution

A method that merges hot-spot coordinates with detected defect coordinates from other inspection devices, adding type information, and decides an inspection sequence to select the appropriate inspection method for each coordinate, allowing for high-accuracy defect review and fixed-point inspection with improved throughput by optimizing image capture sequences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If optical inspection device sensitivity is increased to detect microscopic defects, then defect detection capability is improved, but manufacturing noise and false positives increase

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidmanufacturing noise
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by differentiating inspection methods based on defect type. Systematic defects (which have consistent locations and patterns) are inspected using optical inspection devices, while random defects are inspected using SEM. This localized approach to quality control allows each inspection method to be optimized for its specific defect type, improving detection accuracy without increasing false positives from overly sensitive optical inspection across all defect types.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If SEM is used to capture high-resolution images of microscopic defects, then measurement precision is improved, but inspection time increases and throughput decreases

Engineering Contradiction:
Improveimage resolutionVSAvoidinspection throughput
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent segments the defect inspection process into two distinct pathways: optical inspection for systematic defects and SEM inspection for random defects. By dividing the inspection task based on defect characteristics rather than using a single method for all defects, the system achieves high resolution where needed (SEM for random defects) while maintaining high throughput for the majority of systematic defects detected by optical inspection.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies partial action by using SEM only for the subset of random defects that require high-resolution imaging, rather than applying SEM to all defects. Optical inspection handles the larger portion of systematic defects, and SEM is used partially only when higher resolution is necessary, thus optimizing the balance between measurement precision and productivity.

Inventive Principle:
Principle #16Partial or excessive action

3Measurement precision

If whole surface inspection is performed using SEM, then defect detection accuracy is improved, but inspection time and cost increase significantly

Engineering Contradiction:
Improvedefect detection accuracyVSAvoidinspection time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent applies local quality by assigning different inspection methods to different defect types based on their characteristics. Optical inspection is used for systematic defects that have predictable locations and patterns, while SEM is used for random defects. This localized approach ensures high detection accuracy for each defect type without the prohibitive time cost of using SEM for the entire wafer surface.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9165356B2Defect inspection method and defect inspection device
Publication Date: 2015.10.20 HITACHI HIGH TECH CORP
  • US9165356B2 patent drawing
  • US9165356B2 patent drawing
  • US9165356B2 patent drawing

AI summary

A defect inspection method for inspecting a defect on a semiconductor wafer, using plural inspection methods includes: merging hot-spot coordinates as coordinates on the semiconductor wafer, designated by a user, or coordinates where a systematic defect can occur, with detected defect coordinates on the semiconductor wafer, acquired from inspection information, after information indicating the type of coordinates are added thereto; deciding an inspection sequence of the coordinates merged with each other; and defect inspection for executing selection using the information indicating the respective types of the coordinates merged with each other, and executing an inspection by selecting an inspection method for every coordinates to be inspected.