Wafer Detachment via Solvent Dissolution

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Solution Overview

Problem

The semiconductor industry faces challenges in non-destructively detaching thin wafers from carriers due to the risk of breakage and damage from high temperatures and forces involved in the detachment process, particularly with the existing methods that require temperatures above 350°C and result in thermal gradients.

Innovation Solution

A device and method for detaching wafers from carriers at temperatures below 350°C, using a receiving device with a connection release means and detachment means that operate in a temperature range of 0 to 350°C, preferably 10 to 200°C, employing a debonding agent that can selectively dissolve the connecting layer using solvents or mechanical means, allowing for ambient temperature operation and reducing energy consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If laser heating is used to detach the wafer from the carrier, then the connecting layer is effectively destroyed, but the wafer is subjected to considerable temperature increase and thermal gradients causing damage

Engineering Contradiction:

Improvedetachment effectivenessVSAvoidthermal damage to wafer

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a liquid solvent as an intermediary substance that chemically dissolves the connecting layer between wafer and carrier. This mediator enables detachment without direct thermal contact, allowing the process to proceed at low temperatures (20-80°C) while effectively breaking the bond through chemical action rather than thermal degradation

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the operational parameter from high temperature (400-500°C laser heating) to low temperature (20-80°C solvent processing). By shifting the detachment mechanism from thermal degradation to chemical dissolution, the process achieves effective bond breaking while maintaining wafer integrity and avoiding thermal gradients

Inventive Principle:

Principle #35Parameter changes

2Reliability

If high temperature (above 350°C) is used for detachment, then the connecting layer is destroyed, but more energy is required and the wafer may be damaged

Engineering Contradiction:

Improvedetachment effectivenessVSAvoidenergy consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent fundamentally changes the operational parameter from high temperature processing to low temperature solvent-based processing. This parameter shift reduces energy consumption significantly while maintaining detachment effectiveness through chemical dissolution of the connecting layer at temperatures of 20-80°C

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention replaces the thermal-mechanical detachment system (laser heating causing thermal expansion and bond failure) with a chemical system (solvent dissolution). This substitution eliminates the need for high energy input while achieving the same detachment goal through chemical interaction with the connecting layer

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Productivity

If mechanical forces are applied for detachment, then the wafer can be separated from the carrier, but thin wafers easily break or are damaged during the process

Engineering Contradiction:

Improvedetachment capabilityVSAvoidwafer integrity

Core Design Contradiction:

ProductivityVSStrength

Solution Approach 1:

The liquid solvent acts as a mediator that penetrates to the interface between wafer and carrier, chemically dissolving the connecting layer from the edges inward. This gradual chemical separation eliminates the need for abrupt mechanical forces that could fracture thin wafers, allowing the wafer to detach intact while maintaining its structural strength

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The solvent is applied in advance to the edge region of the carrier-wafer assembly, where it begins dissolving the connecting layer before detachment occurs. This preliminary chemical action weakens the bond progressively from the edges, preparing the interface for gentle separation without requiring forceful mechanical intervention that could damage the wafer

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables safe and energy-efficient detachment of wafers from carriers without causing damage, maintaining the structural integrity of thin substrates and reducing the risk of thermal gradients, while allowing for simultaneous cleaning and minimizing contamination.

Implementation Method 1

The use of a solvent for dissolving the connecting layer from a carrier-wafer composite is described

Methodology Applied

Scientific EffectDissolution: Solvation

Data Source

PatentEP2660851B1Device and method for releasing a wafer from a holder

Publication Date: 2020.10.14 EV GRP

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Figure 3a~3b

AI summary

The device has a releasing device (16) that is configured to form an immersion bath for receiving a wafer carrier network (21). A working chamber (28) provided in a release position of the wafer carrier network is configured to receive the peripheral sector of a side edge (23). A solvent is introduced for dissolving a bonding layer (3) on the side edge of the support wafer. A rotation device (5, 5W) is configured for rotation of the carrier wafer composite in the release position. An independent claim is included for a method for peeling of wafer from carrier.