Silicon Wafer DIC Defect Shape Measurement for Precise Polishing
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Solution Overview
Problem
Existing methods for detecting DIC defects on silicon wafers can only specify the position coordinates of the defects, failing to accurately measure the shape, including size, which is crucial for effective polishing and device fabrication.
Innovation Solution
A method that combines particle counter detection with phase-shifting interferometry to measure the shape, including height or depth, of DIC defects on silicon wafers, allowing for precise specification of polishing removal amounts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a particle counter is used to detect DIC defects, then the position coordinates of defects can be specified, but the shape including size of defects cannot be measured
Solution Approach 1:
The patent combines particle counter detection with phase-shifting interferometry measurement systems into an integrated workflow. The particle counter identifies defect positions, and the phase-shifting interferometry system subsequently measures the shape and size at those positions, merging the capabilities of both systems to achieve comprehensive defect characterization.
Solution Approach 2:
The particle counter performs preliminary detection to identify and specify defect position coordinates before the phase-shifting interferometry measurement is conducted. This preliminary action guides the subsequent detailed shape measurement, ensuring that measurement resources are focused on relevant defect locations.
2Productivity
If conventional DIC defect detection is used, then detection speed is maintained, but shape measurement accuracy is insufficient
Solution Approach 1:
The measurement process is segmented into two distinct stages: first, rapid defect detection and position specification using particle counter technology; second, detailed shape and size measurement using phase-shifting interferometry at the identified positions. This segmentation allows each stage to optimize for its specific function, maintaining overall productivity while achieving high measurement precision.
Solution Approach 2:
Instead of applying complex shape measurement to all areas of the wafer, the system applies detailed phase-shifting interferometry measurements only to the specific defect locations identified by the particle counter. This partial action approach maintains productivity by limiting detailed measurement to necessary locations while ensuring accurate shape measurement where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate and efficient measurement of DIC defect shapes, leading to reduced polishing time and cost, while enhancing the productivity and quality of silicon wafers by effectively addressing DIC defects.
Implementation Method 1
DIC defects are defects detected mainly with such an evaluation apparatus as a particle counter SurfScan series available from KLA-Tencor Corporation, for example, SP2 or SP3, further specifically in DIC mode utilizing bright field observation
Implementation Method 2
measuring a shape including at least a height or depth of the detected DIC defect by utilizing the specified position coordinates according to phase-shifting interferometry
Data Source
AI summary
A method for measuring a DIC defect shape on a silicon wafer, the method including steps of: detecting a DIC defect on a main surface of the silicon wafer with a particle counter; specifying position coordinates of the detected DIC defect; and measuring a shape including at least a height or depth of the detected DIC defect by utilizing the specified position coordinates according to phase-shifting interferometry. The method for measuring a DIC defect shape by which the shape including size of DIC defect generated on a main surface of a silicon wafer is easily and precisely measured.