Semiconductor Wafer Dicing Sequence to Prevent Die Chipping

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Solution Overview

Problem

The existing dicing processes for semiconductor wafers often result in damage to the semiconductor die, such as chipping or cracking, due to increased stress at the final cut interface, particularly when cutting through the dielectric structures.

Innovation Solution

A method for dicing semiconductor wafers that involves performing a first dicing cut through the first dielectric structure and into the semiconductor substrate from one side, followed by a third dicing cut through the remainder of the substrate from the opposite side, thereby reducing the likelihood of damage by shifting the final cut interface to the substrate rather than the dielectric structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a single dicing cut is performed through the dielectric structure and substrate, then the dicing process is simple and fast, but the semiconductor die is damaged due to increased stress at the final cut interface

Engineering Contradiction:

Improvedicing speedVSAvoiddie integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The dicing process is divided into multiple sequential cuts: a first cut through the dielectric structure, a second cut through the substrate from the opposite side, and a third cut to complete the separation. This segmentation distributes the cutting stress across multiple interfaces rather than concentrating it at a single final interface, preventing die damage while maintaining efficient production

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The dielectric structure is cut through in advance before the final substrate cut is completed. This preliminary action shifts the final cut interface to occur within the substrate rather than at the dielectric-die interface, eliminating the stress concentration that causes chipping and cracking during breakthrough

Inventive Principle:

Principle #10Preliminary action

2Ease of manufacture

If the final cut interface is at the dielectric structure, then the dicing path is direct, but the dielectric structure is damaged causing die failure

Engineering Contradiction:

Improvedicing process simplicityVSAvoidstress on dielectric structure

Core Design Contradiction:

Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

Instead of completing the cut through the dielectric structure last (which causes damage), the process inverts the sequence by completing the substrate cut first from the opposite side. This reversal shifts the final interface to the substrate, protecting the dielectric structure from breakthrough stress while maintaining process simplicity

Inventive Principle:

Principle #13The other way round (Inversion)

Data Source

PatentUS12230542B2Method for dicing a semiconductor wafer structure

Publication Date: 2025.02.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The present disclosure relates to a method for forming an integrated chip. The method includes performing a first dicing cut along a first direction and extending into a semiconductor substrate from a first side of the semiconductor substrate. The method includes performing a second dicing cut along the first direction and extending into the semiconductor substrate from a second side of the semiconductor substrate, opposite the first side. The method includes performing a third dicing cut, separate from the second dicing cut, along the first direction and extending into the semiconductor substrate from the second side of the semiconductor substrate.