Wafer Dicing via Plasma Etching and Scribe Line Segmentation
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Solution Overview
Problem
The shrinking critical dimension of semiconductor devices increases manufacturing costs due to longer wafer dicing times in mechanical dicing processes, and plasma dicing is impeded by non-dry-etchable materials in scribe lines, which can damage dies during byproduct removal.
Innovation Solution
A method of wafer dicing that removes the scribe line structure in multiple stages, using lithography and etching processes to isolate the test device, and then employing plasma dicing to disconnect the scribe line structure from dies without directly removing the test device, allowing for efficient separation and reduced manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma dicing process is applied to reduce wafer dicing time, then productivity is improved, but the process is impeded when scribe lines contain non-dry-etchable materials like Al
Solution Approach 1:
The scribe line structure is divided into two parts: the test device portion containing Al and the insulating layer portion. The insulating layer is selectively removed in advance, allowing plasma dicing to proceed without being impeded by the Al-containing test device, thus enabling both high productivity and process feasibility
Solution Approach 2:
The insulating layer surrounding the test device is removed before the plasma dicing process. This preliminary action eliminates the barrier that would prevent plasma dicing, allowing the subsequent dicing to proceed efficiently without impediment from non-dry-etchable materials
2Ease of manufacture
If additional solution process is applied to remove byproduct, then the barely etchable material is removed, but the dies are damaged
Solution Approach 1:
The insulating layer containing the barely etchable material is extracted and removed in advance, before plasma dicing. This eliminates the need for additional solution processes that would damage the dies, as the problematic material is already removed and will not generate harmful byproducts during dicing
3Ease of manufacture
If mechanical dicing or laser dicing is applied, then the wafer can be diced, but the die singulation time is much longer
Solution Approach 1:
The insulating layer is removed in advance through lithography and etching processes, preparing the wafer for rapid plasma dicing. This preliminary preparation enables the subsequent plasma dicing to proceed much faster than mechanical or laser dicing, significantly reducing die singulation time while maintaining ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly shortens the die singulation time in plasma dicing compared to laser or mechanical dicing, lowering manufacturing costs while avoiding damage to barely etchable materials.
Implementation Method 1
a plasma dicing process
Data Source
AI summary
A method of wafer dicing is provided. The method of wafer dicing includes: providing a wafer, wherein the wafer includes a substrate, dies formed in and over the substrate and a scribe line structure located in a scribe line region between adjacent dies; removing a portion of the scribe line structure around a test device in the scribe line structure; attaching a front side of the wafer with a first tape; removing a portion of the substrate overlapping with the scribe line region from a back side of the wafer; attaching the back side of the wafer with a second tape; and removing the first tape along with the remaining portion of the scribe line structure attached thereon, leaving the dies separately attached on the second tape.