Wafer Discharge Protection Grid for GaN-on-SiC Singulation
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Solution Overview
Problem
Semiconductor devices fabricated on insulative substrates, such as GaN on SiC, can accumulate electrostatic charge during fabrication and singulation, leading to potential device damage due to sudden discharge.
Innovation Solution
A conductive grid structure is formed around each device on the wafer using doping, activation, and isolation techniques, allowing electrostatic charges to be distributed and dissipated through a ground reference, utilizing a two-dimensional electron gas layer in the GaN substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive grid structure is formed around each device to dissipate electrostatic charge, then charge dissipation capability is improved, but device complexity increases
Solution Approach 1:
The conductive grid structure utilizes the substrate's own two-dimensional electron gas layer to provide charge dissipation pathways, allowing the substrate to serve its dual function of supporting devices and providing electrostatic protection without requiring external protective structures
Solution Approach 2:
The substrate is designed to perform multiple functions: it serves as the mechanical support for semiconductor devices, provides the two-dimensional electron gas layer for charge dissipation, and acts as the conductive grid structure itself, eliminating the need for separate protective components
2Reliability
If doping and activation techniques are used to form the conductive grid, then charge distribution is improved, but manufacturing complexity increases
Solution Approach 1:
The conductive grid structure is formed during the substrate preparation phase before device fabrication, using preliminary doping and activation techniques to establish charge dissipation pathways that will protect devices throughout subsequent manufacturing and operation
Solution Approach 2:
The substrate's electrical properties are modified through controlled doping and activation processes that change the charge carrier concentration and mobility in specific regions, creating the conductive grid pattern without altering the mechanical or structural properties of the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive grid structure effectively distributes and dissipates electrostatic charges, minimizing damage to devices during fabrication and singulation processes.
Implementation Method 1
A conductive grid structure is formed around each device on the wafer using doping, activation, and isolation techniques, allowing electrostatic charges to be distributed and dissipated through a ground reference, utilizing a two-dimensional electron gas layer in the GaN substrate.
Data Source
AI summary
A wafer includes a substrate that includes a channel layer, a first active region, a second active region, and a saw street region between the first active region and the second active region. The wafer includes a first device formed on the substrate in the first active region. The first device includes a first portion of the channel layer. The wafer includes a second device formed on the substrate in the second active region. The second device includes a second portion of the channel layer. The wafer includes a conductive channel between the first active region and the second active region. The conductive channel is in the saw street of the wafer and includes a third portion of the channel layer.