Wafer Edge Etching Alignment Using Temperature-Tuned Positioning
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Solution Overview
Problem
Existing semiconductor wafer edge processing technologies face challenges in achieving precise, uniform, and damage-free etching due to issues with temperature changes and equipment complexity, leading to poor chip manufacturing yield and high processing costs.
Innovation Solution
A semiconductor processing device with a temperature control component and a positioning structure that adjusts the alignment of the wafer's center axis with the supporting area's axis, using chemical fluids to etch the edge, and fine-tuning the temperature to maintain etching accuracy despite environmental changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional polishing method is used to etch wafer edge, then the process is simple and low cost, but the etching precision and uniformity deteriorate causing damaged edges
Solution Approach 1:
The patent replaces the mechanical polishing system with a chemical etching system. Chemical fluids are delivered through channels to etch the wafer edge, eliminating mechanical contact that causes damage while achieving precise and uniform etching results.
Solution Approach 2:
The patent uses chemical fluids delivered through channels (hydraulic principle) to achieve the etching function. The chemical fluid flow system replaces mechanical polishing tools, enabling precise control of the etching process without mechanical damage to the wafer edge.
2Measurement precision
If pre-trimmed thin layer deposition method is used, then the thin layer can be positioned, but the etching uniformity deteriorates due to misalignment
Solution Approach 1:
The patent incorporates a positioning structure that provides feedback control for wafer alignment. The structure detects and corrects misalignment between the thin layer and substrate layer centers, ensuring that the chemical etching proceeds with uniform width across the wafer edge.
Solution Approach 2:
The positioning structure creates an equipotential alignment state where the centers of the thin layer and substrate layer are perfectly matched. This eliminates the misalignment problem that causes uneven etching, ensuring uniform etched width across the entire edge.
3Manufacturing precision
If shower method with special nozzle is used, then accurate and uniform etching can be achieved, but the device complexity and processing cost increase significantly
Solution Approach 1:
The patent designs the chemical fluid channels to serve multiple functions: they position the etching area, control the etching uniformity, and deliver the chemical fluid. This multi-functionality eliminates the need for separate positioning mechanisms and complex nozzle systems, reducing device complexity while maintaining precision.
Solution Approach 2:
The patent merges the positioning function and etching delivery function into a single integrated structure. The channels that deliver chemical fluid also serve as the positioning structure, combining multiple functions into one element and significantly simplifying the device design.
4Ease of manufacture
If device made of high temperature expansion coefficient material is used, then the device can be manufactured easily, but the etching accuracy deteriorates due to temperature changes during transportation and usage
Solution Approach 1:
The patent selects materials with specific thermal expansion parameters (low expansion coefficient) for the positioning structure. This parameter change ensures that the positioning accuracy is maintained across temperature variations during transportation and usage, preventing deterioration of etching accuracy.
Solution Approach 2:
The patent compensates for temperature effects by using materials with appropriate thermal properties in the design phase. This beforehand cushioning against temperature changes ensures that the positioning structure maintains its dimensional stability and positioning accuracy under varying temperature conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures precise and uniform etching of semiconductor wafer edges, reducing the impact of temperature changes and other factors, thereby improving chip yield and reducing processing costs.
Implementation Method 1
A temperature control component disposed adjacent to the upper chamber and/or the lower chamber, and configured to adjust a temperature of the upper chamber and/or the lower chamber by adjusting a temperature of the temperature control component
Implementation Method 2
A temperature control component disposed adjacent to the upper chamber and/or the lower chamber, and configured to adjust a temperature of the upper chamber and/or the lower chamber by adjusting a temperature of the temperature control component
Implementation Method 3
a first channel configured to provide a first space for a flow of one or more chemical fluids to etch an edge of the wafer
Data Source
AI summary
A semiconductor processing device includes a lower chamber having a first supporting area configured to support the wafer, an upper chamber having a second supporting area, wherein when the upper chamber is engaged with the lower chamber, the wafer is placed between the first supporting area and the second supporting area. A temperature control component, disposed adjacent to the upper chamber and/or the lower chamber, adjusts the temperature of the upper chamber and/or the lower chamber by adjusting its own temperature. A first channel formed at the edge area of the first supporting area or the second supporting area. The first channel provides a first space for the flow of one or more chemical fluids for etching the edge area of the wafer. The upper chamber and/or the lower chamber includes a positioning structure. The present disclosure adjusts the positioning function of the positioning structure by adjusting the temperature.