Wafer Edge Protection via Flush Encapsulation and Mold Geometry

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Solution Overview

Problem

The existing methods for protecting the peripheries of semiconductor wafers during processing are inadequate, leading to edge chipping and cracking due to exposure and excessive stress, which can propagate damage and reduce yield.

Innovation Solution

A method involving a mold with an inner diameter greater than the wafer's outer diameter, where the encapsulation material covers the active surface and side surfaces but not the periphery, reducing stress and ensuring the encapsulation material is flush with the wafer's side surfaces, thereby protecting the edges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a mold body with smaller inner diameter than wafer outer diameter is used to contact the wafer surface for encapsulation, then contamination is prevented by blocking mold compound from reaching the wafer edge, but the wafer periphery becomes exposed and vulnerable to edge chipping and cracking

Engineering Contradiction:
Improvecontamination preventionVSAvoidwafer periphery integrity
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent transitions from a 2D encapsulation approach (mold body contacting only the wafer surface) to a 3D approach where the mold body extends beyond the wafer perimeter. This dimensional extension allows the mold to simultaneously protect the wafer surface from contamination and provide mechanical support to the periphery, eliminating the trade-off between contamination prevention and edge integrity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the mold body contacts the wafer periphery during encapsulation, then edge protection is provided, but excessive stress is imposed on the wafer causing potential damage

Engineering Contradiction:
Improveedge protectionVSAvoidstress on wafer
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The patent modifies the geometric parameters of the mold body, specifically extending its diameter beyond the wafer outer diameter and configuring it to contact the carrier substrate rather than directly pressing on the wafer periphery. This parameter change allows the mold to provide edge protection through geometric confinement while distributing stress to the more robust carrier substrate, reducing the risk of wafer damage.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the mold inner diameter is made larger than the wafer outer diameter to allow full encapsulation, then edge protection and stress reduction are achieved, but the encapsulation material may not properly contain the periphery

Engineering Contradiction:
Improveedge protectionVSAvoidencapsulation containment
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent introduces the carrier substrate as an intermediary element between the wafer and the mold body. The mold contacts and contains the carrier substrate, which in turn supports the wafer. This intermediary approach allows the mold to provide geometric containment and edge protection without directly constraining the fragile wafer periphery, maintaining both containment precision and edge protection.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively prevents edge damage and stress, maintaining the integrity of the semiconductor devices and increasing the yield by ensuring the encapsulation material is flush with the wafer's side surfaces, allowing for safer handling and processing.

Implementation Method 1

The encapsulation material may be cured, and the mold may be removed from contact with the periphery of the wafer

Methodology Applied
Scientific EffectCuring: Photopolymerisation

Data Source

PatentEP3195351B1Methods of protecting peripheries of in-process semiconductor wafers and related in-process wafers and systems
Publication Date: 2019.03.20 MICRON TECHNOLOGY INC
  • EP3195351B1 patent drawingFigure 1~2
  • EP3195351B1 patent drawingFigure 3~4
  • EP3195351B1 patent drawingFigure 5~6

AI summary

Methods of processing semiconductor wafers may involve, for example, encapsulating an active surface and each side surface of a wafer of semiconductor material, a plurality of semiconductor devices located on the active surface of the wafer, an exposed side surface of an adhesive material located on a back side surface of the wafer, and at least a portion of a side surface of a carrier substrate secured to the wafer by the adhesive material in an encapsulation material. At least a portion of the side surface of the adhesive material may be exposed by removing at least a portion of the encapsulation material. The carrier substrate may be detached from the wafer. Processing systems and in-process semiconductor wafers are also disclosed.