Semiconductor Wafer Edge Profile for Focus-Stable Processing

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Solution Overview

Problem

Semiconductor wafers supported by a member can experience bending in their outer regions during manufacturing processes like exposure, film formation, and etching, leading to focus accuracy issues and potential process failures due to uneven thicknesses causing the outer regions to curve or warp.

Innovation Solution

The semiconductor wafer design incorporates a convex or concave portion in the outer circumferential region with a thickness protruded or recessed relative to the inner region, ensuring a horizontal attitude during support, thereby reducing bending and maintaining focus accuracy and process control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the semiconductor wafer is supported by a support member during manufacturing processes, then the wafer can be held in place for exposure, film formation, and etching, but the outer region of the wafer bends due to uneven thickness distribution

Engineering Contradiction:
Improveprocess stabilityVSAvoidwafer flatness
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The patent applies local quality by creating a convex portion specifically in the outer circumferential region of the semiconductor wafer. This localized thickness variation compensates for the bending tendency of the outer region during support, ensuring that only the necessary support region contacts the support member while the outer region maintains proper flatness for processing.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If the outer circumferential region has a convex portion with protruded thickness, then focus accuracy is improved and bending is reduced, but the manufacturing complexity increases

Engineering Contradiction:
Improvefocus accuracyVSAvoidwafer structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by modifying the thickness parameter of the wafer in the outer circumferential region. The convex portion creates a controlled thickness variation (protrusion) that changes the physical parameter of the wafer structure to prevent bending and maintain focus accuracy during manufacturing processes.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11984313B2Semiconductor wafer, manufacturing method for semiconductor wafer, and manufacturing method for semiconductor device
Publication Date: 2024.05.14 KIOXIA CORP
  • US11984313B2 patent drawing
  • US11984313B2 patent drawing
  • US11984313B2 patent drawing

AI summary

A semiconductor wafer according to an embodiment includes a support region facing a support member, an outer circumferential region positioned on an outer side of the support region, and an inner circumferential region positioned on an inner side of the support region. The outer circumferential region has a convex portion with a thickness protruded upward with respect to the inner circumferential region or a concave portion with a thickness recessed downward with respect to the inner circumferential region.