Wafer Edge Material Removal via Solvent Volatilization
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Solution Overview
Problem
High viscosity materials and low volatility solvents on wafer peripheries spread during rotation, making it difficult to remove the material from the peripheral portion of a wafer surface in semiconductor device manufacturing.
Innovation Solution
A semiconductor device manufacturing method involving a coating step with a solvent-containing material, a volatilization step to evaporate the solvent, and a rinse step where an edge rinse solution is jetted from a nozzle to the wafer's peripheral portion while rotating, preventing material spread due to centrifugal force.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the material on the peripheral portion of the wafer is removed by jetting a rinse solution while the wafer is being rotated, then the material removal is performed, but the material formed on a central portion of the wafer spreads to the peripheral portion
Solution Approach 1:
The patent applies a preliminary action by heating the wafer before the rinse step to volatilize the solvent in the material. This preliminary volatilization removes the solvent that would otherwise cause the material to spread during the subsequent rinse operation, thereby preventing the harmful effect of material spread while maintaining the ability to remove peripheral material.
Solution Approach 2:
The patent changes the temperature parameter of the wafer by applying heat before the rinse step. This temperature change causes the solvent to volatilize, fundamentally altering the physical state of the material from a solvent-containing state (prone to spreading) to a dried state (resistant to spreading), thus resolving the contradiction between material removal and preventing material spread.
2Quantity of substance
If the viscosity of the material is high or the volatility of a solvent contained in the material is low, then the material can be formed on the wafer, but the spread of the material to the peripheral portion by centrifugal force is markedly large
Solution Approach 1:
The patent performs a preliminary heating action to volatilize the solvent before the rinse step. This preliminary action is particularly effective for materials with low solvent volatility, as the applied heat provides the necessary energy for solvent evaporation, preventing the solvent from carrying the material to the periphery during rotation.
Solution Approach 2:
The patent changes the temperature parameter to facilitate solvent volatilization. For materials with high viscosity or low solvent volatility, the elevated temperature parameter enables the solvent to overcome its low volatility and evaporate, thereby preventing centrifugal spread of the material during the rinse operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Ensures unfailing removal of the material from the peripheral portion of the wafer surface by evaporating the solvent, preventing its spread during the rinse process.
Implementation Method 1
a volatilization step of volatilizing the solvent by heating the material
Implementation Method 2
the spread of the material to the peripheral portion by centrifugal force accompanying the rotation of the wafer
Data Source
AI summary
A semiconductor device manufacturing method of the present invention includes a coating step of coating a front surface of a wafer with a material containing a solvent, a volatilization step of volatilizing the solvent by heating the material, and a rinse step of jetting an edge rinse solution for removing the material from a first nozzle to a peripheral portion of the front surface of the wafer while rotating the wafer.