Wafer Edge Trimming Using Modification Layer Position Feedback
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Solution Overview
Problem
Conventional end face grinding devices for semiconductor wafers face issues with non-uniform spindle movement, leading to potential damage of the wafer due to inappropriate control of diamond wheel movement, which can result in bending, cracking, or chipping, especially during edge trimming processes.
Innovation Solution
A substrate processing system that includes a modification layer forming device to create a modification layer on the wafer, an interface processing device to modify the interface between the target and support wafers, a position detection device to accurately detect the modification layer or interface positions, and a control device to manage these processes, ensuring precise control and removal of the peripheral portion of the wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional end face grinding devices use a rotating diamond wheel to grind the wafer peripheral portion, then the wafer edge can be trimmed, but the non-uniform spindle movement causes inappropriate control of diamond wheel movement leading to wafer damage such as bending, cracking, or chipping
Solution Approach 1:
The patent replaces the conventional mechanical grinding system with a laser-based modification system. The laser beam forms a modification layer within the wafer without requiring mechanical contact, thereby eliminating the problems caused by non-uniform spindle movement and mechanical control issues while achieving the same edge trimming function.
Solution Approach 2:
The patent applies preliminary action by forming a modification layer within the wafer before removing the peripheral portion. This modification layer serves as a guide for subsequent peripheral removal, ensuring precise control and preventing wafer damage during the trimming process.
2Manufacturing precision
If a modification layer is formed using laser irradiation, then precise control of the modification layer position is achieved, but additional equipment and process steps are required
Solution Approach 1:
The patent uses laser irradiation to form the modification layer, replacing complex mechanical positioning systems with optical field control. The laser beam can be precisely controlled in position and depth through optical parameters, achieving high manufacturing precision without requiring complex mechanical structures.
Solution Approach 2:
The modification layer itself serves as an intermediary that guides the subsequent peripheral removal process. By forming this intermediate structure first, the system achieves precise control without requiring direct real-time control of the removal process, simplifying the overall system complexity.
3Reliability
If the peripheral portion is removed starting from the modification layer, then wafer damage is prevented, but the process requires precise positioning control
Solution Approach 1:
The patent employs feedback mechanisms through position detection devices that monitor the modification layer position. This detected position information is fed back to control the peripheral removal process, ensuring that removal starts precisely from the modification layer boundary, thereby preventing wafer damage while maintaining accurate positioning.
Solution Approach 2:
The modification layer is formed in advance as a predetermined guide structure. This preliminary action creates a reference that simplifies subsequent positioning control during peripheral removal, as the removal process can follow the pre-formed modification layer boundary rather than requiring complex real-time positioning calculations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively prevents damage to the wafer by precisely controlling the edge trimming process, ensuring a smooth outer surface and maintaining the integrity of the wafer, thereby reducing the risk of cracking and chipping.
Implementation Method 1
a laser beam is irradiated into a semiconductor wafer, thereby forming a modification layer within the semiconductor wafer
Implementation Method 2
a position detection device configured to detect a position of the modification layer formed in the modification layer forming device or a position of the interface processed in the interface processing device
Data Source
AI summary
A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.