Semiconductor Wafer Edge Ring Structure Against Crack Delamination
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Solution Overview
Problem
The edge portion of semiconductor wafers is vulnerable to damage during handling and manufacturing processes, leading to defects and delamination that can propagate inward, affecting the integrity of the entire wafer.
Innovation Solution
A metallic edge ring is formed around the peripheral region of the wafer to prevent cracks and delamination, using a wafer edge exposure (WEE) operation to pattern and form connecting structures and interconnects, which are electrically isolated from the central die region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the edge portion of semiconductor wafers is used during handling and manufacturing, then productivity is improved by utilizing the entire wafer area, but the edge portion becomes vulnerable to damage leading to defects and delamination
Solution Approach 1:
The wafer is segmented into a central region and a peripheral region, with the peripheral region being processed separately through wafer edge exposure to form connecting structures that are electrically isolated from the central die region. This segmentation allows the edge portion to be utilized for additional interconnects without compromising the integrity of the central die region.
Solution Approach 2:
A metallic edge ring is formed as an intermediary structure in the peripheral region to provide mechanical support and prevent delamination at the vulnerable edge portion. This intermediary structure acts as a barrier that stops defect propagation from the edge toward the central region while allowing the edge area to be productively utilized.
2Ease of manufacture
If cracks and delamination occur at the edge portion, then manufacturing simplicity is maintained, but defects propagate inward affecting the entire wafer
Solution Approach 1:
The metallic edge ring and connecting structures are formed in the peripheral region before the central region processing is completed. This preliminary action in the peripheral region creates a protective barrier that prevents subsequent defect propagation from the edge toward the central die region, addressing the reliability issue before it can affect the entire wafer.
Solution Approach 2:
The vulnerable edge portion, which is prone to cracks and delamination, is converted into a beneficial structure by forming the metallic edge ring and connecting structures there. The edge region that would normally be a source of defects is transformed into a protective element that prevents defect propagation to the central region.
3Reliability
If a metallic edge ring is formed in the peripheral region, then structural integrity is improved by preventing defect propagation, but device complexity increases
Solution Approach 1:
The metallic edge ring and connecting structures are formed only in the peripheral region with different properties than the central region. The peripheral region has enhanced mechanical strength and electrical isolation characteristics, while the central region maintains its original design. This local differentiation provides structural integrity where needed without unnecessarily complicating the entire device.
Solution Approach 2:
The device is segmented into a central die region and a peripheral region with distinct structures. The peripheral region contains the metallic edge ring and connecting structures that provide mechanical support and electrical isolation, while the central region contains the active die. This segmentation allows the complexity to be confined to the peripheral region only.
Data Source
AI summary
A method for forming a semiconductor package structure includes following operations. A first semiconductor wafer is received. The first semiconductor wafer includes a first front side and a first backside. The first semiconductor wafer has a first central region and a first peripheral region. The first semiconductor wafer includes a first interconnect structure in the first central region on the first front side, a first ring structure in the first peripheral region on the first front side, and a first bonding layer over the first ring structure and the first interconnect structure on the first front side. A second semiconductor wafer is received. The second semiconductor wafer has a second front side and a second backside. The second semiconductor wafer includes a second bonding layer disposed on the second front side. The first bonding layer is bonded to the second bonding layer.


